The dependence of the metal gate work function on the underlying gate dielectric in advanced metal-oxide-semiconductor ~MOS! gate stacks was explored. Metal work functions on high-k dielectrics are observed to differ appreciably from their values on SiO2 or in vacuum. We applied the interface dipole theory to the interface between the gate and the gate dielectric of a MOS transistor and obtaine...

The effect of MOSFET gate-oxide reliability on MOS switch with bootstrapped technique is investigated with the switched-capacitor circuit in a 130-nm CMOS process. The sample-and-hold amplifier with the openloop configuration is used to verify the impact of MOS switch gate-oxide reliability on the switched-capacitor circuit. After overstress on the MOS switch of sampleand-hold amplifier, the ci...

Th is paper presents a programmable resistor using two-input floating gate MOS transistor (FGMOST). One of the two-input gates is connected to the drain and the other is connected to a tuned voltage to control the floatin g gate transistor resistance. A wide range of the programmable resistance is achieved by controlling the tuned voltage. The resistance is changed by 33% by varying the tuned v...

This paper presents a new simple configuration to realize the voltage-controlled floating resistor, which is suitable for integrated circuit implementation. The proposed resistor is composed of three main components: MOS transistor operating in the non-saturation region, DDCC, and MOS voltage divider. The MOS transistor operating in the non-saturation region is used to configure a floating line...

As the gate oxide thickness decreases below 2 nm, the gate leakage current increases dramatically due to direct tunneling current. This large gate leakage current will be an obstacle to reducing gate oxide thickness for the high speed operation of future devices. A MOS transistor with Ta2O5 gate dielectric is fabricated and characterized as a possible replacement for MOS transistors with ultra-...

Gate current in metal–oxide–semiconductor (MOS) devices, caused by carriers tunneling through a classically forbidden energy barrier, is studied in this paper. The physical mechanisms of tunneling in an MOS structure are reviewed, along with the particularities of tunneling in modern MOS transistors, including effects such as direct tunneling, polysilicon depletion, hole tunneling and valence b...

The complexity of analog VLSI systems is often limited by the number of pins on a chip rather than by the die area. Currently, many analog parameters and biases are stored off-chip. Moving parameter storage on-chip could save pins and allow us to create complex programmable analog systems. In this paper, we present a design for an on-chip nonvolatile analog memory cell that can be configured in...

Ultra low-voltage (ULV) floating-gate (FG) differential amplifiers are presented. In this paper we present several different approaches to CMOS ULV amplifier design. Sinh-shaped and tanh-shaped transconductance amplifiers are described. Measured results are provided. Keywords— Floating-gate, low-voltage, low-power, lowvoltage amplifiers, analog floating-gate circuits.