نتایج جستجو برای: field ion microscope

تعداد نتایج: 1015276  

Journal: :Optics express 2013
Federico J Furch Sascha Birkner Freek Kelkensberg Achut Giree Alexandria Anderson Claus Peter Schulz Marc J J Vrakking

Coincident electron-ion detection after photoionization in a "reaction microscope" is a very powerful tool to study atomic and molecular dynamics. However, the implementation of this tool in the field of attosecond science has so far been rather limited, due to the lack of high repetition rate laser sources capable of delivering few-cycle pulses with sufficient energy per pulse. In this article...

2015
Yuri V Petrov Oleg F Vyvenko

Reflection ion microscopy (RIM) is a technique that uses a low angle of incidence and scattered ions to form an image of the specimen surface. This paper reports on the development of the instrumentation and the analysis of the capabilities and limitations of the scanning RIM in a helium ion microscope (HIM). The reflected ions were detected by their "conversion" to secondary electrons on a pla...

2017
Alex Belianinov Matthew Burch Olga Ovchinnikova Stephen Jesse

The scanning electron microscope (SEM) is a versatile high-resolution microscopy tool, and perhaps the most widely used imaging platform across many engineering and scientific fields [1]. Within the last decade, another microscopy technique based on a gaseous field ionization source, utilizing Helium and Neon ions has been introduced [2]. While the popularity of the SEM is hardly challenged by ...

Journal: :Optics express 2008
H-G von Ribbeck M Brehm D W van der Weide S Winnerl O Drachenko M Helm F Keilmann

We demonstrate a scattering-type scanning near-field optical microscope (s-SNOM) with broadband THz illumination. A cantilevered W tip is used in tapping AFM mode. The direct scattering spectrum is obtained and optimized by asynchronous optical sampling (ASOPS), while near-field scattering is observed by using a space-domain delay stage and harmonic demodulation of the detector signal. True nea...

1999
F. Zenhausern

We demonstrate a new method whereby near-field optical microscope resolution can be extended to the nanometer regime. The technique is based on measuring the modulation of the scattered electric field from the end of a sharp silicon tip as it is stabilized and scanned in close proximity to a sample surface. Our initial results demonstrate resolution in the 3 nm range--comparable to what can be ...

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