نتایج جستجو برای: etching rate

تعداد نتایج: 970589  

Abstract Background and aim: Over the years, improvments have been done to simplify clinical bonding procedure. One of these material is Transbond™ Plus Self Etching. The aim of this study was to evaluate the effect of saliva contamination and reusing Transbond™ Plus Self Etching Primer (SEP) on shear bond strength of orthodontic brackets. Materials and Methods: Fifty premolars divided into fiv...

Journal: :Journal of the American Ceramic Society 2023

It is essential to etch SiO2 for producing silica glass components, semiconductor devices, and so on. Although wet-etching with hydrogen fluoride (HF) solutions usually employed this purpose, it faces a drawback that microstructures stick during the drying of solution. To overcome problem, we have developed dry-etching technique gaseous HF at high temperatures. In present study, an interesting ...

Journal: :Materials Science in Semiconductor Processing 2021

The Si removal property achieved by a localized microwave hydrogen plasma was investigated. relationship between generation parameters (input power, H2 gas flow rate, and initial surface roughness) the (etching rate revealed. Stress relief of affected layer etching were also demonstrated. Moreover, this technique presents no etching-rate dependence on crystal plane orientation. Therefore, even ...

2004
Andreas Stephen Gerd Sepold Simeon Metev Frank Vollertsen

In this treatment method laser radiation, which is guided from a co-axially expanding liquid jet-stream, locally initiates on a metal surface a thermochemical etching reaction, which leads to selective material removal. Time-resolved measurements of the electrical potential were correlated with the specific processing parameters to identify conditions for stable and enhanced chemical etching re...

Journal: :journal of dental research, dental clinics, dental prospects 0
abdolrahim davari mostafa sadeghi hamid bakhshi

background and aims. er:yag laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. the aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following er:yag laser and/or phosphoric acid etching. materials and methods. the roots of ...

Journal: :Stomatologija 2010
Ruta Bendinskaite Vytaute Peciuliene Vilma Brukiene

BACKGROUND Air-abrasion can be used for enamel preparation before fissure sealing as well as acid etching which is the evidence-based method for enamel preparation before sealing. AIM The aim of this study is to evaluate the status of sealed occlusal surfaces of the first permanent molars after one, two, and five years and to compare consequence of using the two different methods for enamel p...

A. Mohammadzadeh, H. Afarideh, M. Esmaeilnezhad, M. Ghanadi, M. Ghergherehchi,

Background: High and intermediate energy protons are not able to form a track in a solid state nuclear track detector (SSNTD) directly. However, such tracks can be formed through secondary particles created during primary radiation nuclear reactions in a SSNTD. Materials and Methods: The protons with primary energies of 9.6 and 30 MeV available at the cyclotron accelerator with corresponding lo...

2004
U. Balachandran S. L. Morissette J. T. Dusek P. M. M. C. Bressers

We report on a study of the morphology of (100) silicon surfaces etched in aqueous alkaline solutions. It is shown that the formation of pyramidal hillocks during etching can be influenced in two different ways: by the presence of an oxidizing agent (ferricyanide or oxygen) in the etchant solution, or by etching under anodic bias. In both cases pyramid formation is suppressed without a signific...

2017
C. Cozzi G. Polito K. W. Kolasinski G. Barillaro

The controlled electrochemical etching at room temperature of deep (up to 200 μm) silicon microstructures with aspect ratio ranging from 5 to 100 and etching rates from 10 to 3 μm/min, respectively, is here reported and discussed. This allows silicon microfabrication technology entering a region in the parameter space etching-rate vs. aspect-ratio that was so far unreachable for silicon microst...

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