The influence of reactor wall conditions on the characteristics of high density fluorocarbon plasma etch processes has been studied. Results obtained during the etching of oxide, nitride, and silicon in an inductively coupled plasma source fed with various feedgases, such as CHF3 , C3F6 , and C3F6/H2 , indicate that the reactor wall temperature is an important parameter in the etch process. Ade...

We present analytical and computational models used to investigate the dependence of etch resolution on pulse duration, tool radius, and etched feature aspect ratio in electrochemical machining with ultrashort voltage pulses. Our results predict that, for the high aspect ratio system in which the effect of trench top and bottom edges can be ignored, the increase of etch resolution with pulse le...

Plasma etch is a complex semiconductor manufacturing process in which material is removed from the surface of a silicon wafer using a gas in plasma form. As the process etch rate cannot be measured easily during or after processing, virtual metrology is employed to predict the etch rate instantly using ancillary process variables. Virtual metrology is the prediction of metrology variables using...

BACKGROUND To determine the shear bond strength and adhesive remnant index of a new premixed self-etching primer and adhesive (Tectosan, BonaDent, Germany) for orthodontic appliances in comparison to a reference total-etch system Transbond XT. METHODS Bovine incisors were embedded in resin and randomly divided into two groups of 16 samples each. Brackets (Discovery, Dentaurum, Germany) were b...

The purpose of this study was to assess the clinical performance of composite restorations placed with different adhesive systems in primary teeth. In 32 patients, 128 composite restorations were placed using a split-mouth design as follows (4 groups/patient): three-step etch-and-rinse (Group 1), two-step etch-and-rinse (Group 2), two-step self-etch (Group 3), and one-step self-etch (Group 4). ...

Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both w...

The purpose of this study was to evaluate the five-year clinical performance of a two-step self-etch adhesive in non-carious cervical sclerotic lesions with or without selective acid-etching of enamel margins. A total of 104 cervical restorations in 22 patients (46-64 years) were bonded following either self-etch approach (AdheSE non-etch) or a similar application, including selective acid-etch...

A simplified process to fabricate high aspect ratio nanostructures in silicon combining electron beam lithography and deep reactive ion etching (DRIE) is presented. A stable process (HARSiN) has been developed without the need for complicated resist/hard mask processing or complex dry etch technologies. This is achieved using commercially available ZEP520A resist from Nippon Zeon Co., Ltd which...

Dry etching is an important process for micro- and nanofabrication. Sputtering effects can arise in two contexts within a dry-etch process. Incoming ions cause removal of volatile products that arise from the interaction between the dry-etch plasma and the surface to be etched. Also, the momentum transfer of an incoming ion can cause direct removal of the material to be etched, which is undesir...