Aluminum plays a central role in the world of electronic oxide materials. Yet, aluminum sources are very difficult to handle during molecular-beam epitaxy, main reason for which is high oxidization potential aluminum. In this work, we present thorough study behavior thermal laser epitaxy. We identify two distinct operating regimes. At laser-beam fluences, source emanates reproducible fluxes ind...

The remote epitaxy was originally proposed to grow a film, which is not in contact but crystallographically aligned with substrate and easily detachable due van der Waals material as space layer. Here we show that the claimed more likely be nonremote `thru-hole' epitaxy. On thick symmetrically incompatible layer or even three-dimensional amorphous oxide film in-between, demonstratively grew GaN...

The effect of cooling conditions in the plasma-assisted molecular-beam epitaxy growth on structural and optical properties InGaN nanostructures is studied. It shown that samples without nitrogen plasma contributes to suppression phase separation nanostructures. integrated intensity photoluminescence from these increased by a factor 2. Keywords: InGaN, silicon, nanostructures, photoluminescence,...

With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In...

Grown by Molecular Beam Epitaxy Takashi SUEMASU, Motoki TAKAUJI, Cheng LI, Yoshinori OZAWA, Masao ICHIDA and Fumio HASEGAWA Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan Center for Tsukuba Advanced Research Alliance, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan Department of Physics, Konan University, Kobe, Hyo...