نتایج جستجو برای: electrostatic device

تعداد نتایج: 700603  

2008
N. C. Chen Y. N Wang Y. S. Wang W. C. Lien Y. C. Chen

The ability of a nitride light-emitting diode (LED) to withstand electrostatic discharge (ESD) is important because of the insulating property of the sapphire substrate. Therefore, damage caused by ESD to a nitride LED is a valuable subject. However, damage is caused by ESD in a very short period, so monitoring its evolution is very difficult. Accordingly, ESD experiments are performed and the ...

Journal: :SIAM Journal of Applied Mathematics 2014
Florian Méhats Yannick Privat Mario Sigalotti

We investigate the controllability of quantum electrons trapped in a twodimensional device, typically a MOS field-effect transistor. The problem is modeled by the Schrödinger equation in a bounded domain coupled to the Poisson equation for the electrical potential. The controller acts on the system through the boundary condition on the potential, on a part of the boundary modeling the gate. We ...

2005
Yi-Chung Tung Katsuo Kurabayashi

We demonstrate strain-controlled gratings made of an organic elastomer, polydimethylsiloxane sPDMSd, which can achieve optical wavelength tuning by varying their spatial periods. The whole device structure presented in this work incorporates a nanoimprinted PDMS grating integrated with electrostatic microelectromechanical systems actuators on a silicon chip. The fabrication of the device combin...

2004
Jung-Hoon Chun Chang-Hoon Choi

Electro-thermal characteristics of strained-Si MOSFETs operating in high-current, high temperature regimes were investigated using device/circuit mixed mode simulations. The material parameters of strained-Si were calibrated for device simulations. Especially the phonon mean-free-path of strained-Si with high electric fields was estimated based on a full-band Monte Carlo device simulation. Desp...

Journal: :Physical review letters 2002
Z Lin S Ethier T S Hahm W M Tang

Transport scaling with respect to device size in magnetically confined plasmas is critically examined for electrostatic ion-temperature-gradient turbulence using global gyrokinetic particle simulations. It is found, by varying device size normalized by ion gyroradius while keeping other dimensionless plasma parameters fixed, that fluctuation scale length is microscopic in the presence of zonal ...

2000
Michael Kraft

In the paper a review is given of the current state of the art of micromachined inertial sensors accelerometers and gyroscopes. These sensors can be used in a wide range of applications and micromachined devices have a number of significant advantages over their conventional counterparts such as lower cost, smaller form factor and lower power consumption. An overview will be given over the dive...

2003
C H Haas

This paper studies the principle of a novel voltage step-up converter based on a micromachined variable parallel-plate capacitor in combination with an electrostatic actuator. Electrical equivalent circuit and system-level SIMULINK models have been developed. Based on these models, an analysis of design parameters and expected device performance has been performed to serve as a starting point f...

2005
R. Picker I. Altarev J. Bröcker E. Gutsmiedl J. Hartmann A. Müller S. Paul W. Schott U. Trinks O. Zimmer

Finite-element methods along with Monte Carlo simulations were used to design a magnetic storage device for ultracold neutrons (UCN) to measure their lifetime. A setup was determined which should make it possible to confine UCN with negligible losses and detect the protons emerging from β-decay with high efficiency: stacked superconducting solenoids create the magnetic storage field, an electro...

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