Large strains in semiconductors are expected to be more common in future electronic devices utilizing nanostructure components. Hydrostatic pressure (HP) and uniaxial stress (US) loading have inherent limitations for probing the desired strain conditions. Uniaxial strain loading, achieved in dynamic compression experiments, is particularly attractive for attaining well-defined, large strains an...

A charge carrier confined in a quasi-one-dimensional semiconductor helical nanostructure in the presence of an electric field normal to the axis of the helix is subjected to a periodic potential proportional to the strength of the field and the helix radius. As a result, electronic properties of such nanohelices are similar to those of semiconductor superlattices with parameters controlled by t...

Nanofabrication by self-organization methods has attracted much attention owing to the fact that it enables mass production without the use of expensive lithographical tools, such as an electron beam exposure system. Porous alumina can be fabricated electrochemically through anodic oxidation of aluminum by means of such a self-organization method, yielding highly ordered arrays of nanoholes sev...

Resistive memory effect has been found in carbon nanostructure-based devices by Standley et al. Nano Lett. 8, 3345 2008 . Compared to nanostructures, hydrogenated amorphous carbon a-C:H has much more controllable preparation processes. Study on a-C:H-based memory is of great significance to applications of carbon-based electronic devices. We observed nonvolatile resistance memory behaviors in m...

The novel method of the semiconductor nanostructuring (TINE&MEMO) has been developed on the base of the simultaneous AFM-tip induced local anodic oxidation and mechanical modification of the surface under the applying of advanced electric potentials. The TINE&MEMO-based technology allows obtaining the principle new scale of the depth up to 100 nm for the nanostructure fabrication with a low asp...

Paper presents a numerical analysis of quantum states and probability ψψ* function of a Si/SiO2 nanostructure in varying electrostatic field. The position of probability function peak xp is traced and the bias, under which it abandons the structure (emission or discharging bias), is determined. Variations of the ground state energy with the bias is also examined. The Poisson Schrödinger model o...

A hierarchical N-doped carbon nanotube-graphene hybrid nanostructure (NCNT-GHN), in which the graphene layers are distributed inside the CNT inner cavities, was designed to effi ciently support noble metal (e.g., PtRu) nanoparticles. Well-dispersed PtRu nanoparticles with diameters of 2–4 nm were immobilized onto these NCNT-GHN supports by a low-temperature chemical reduction method without any...

Nowadays, ion implantation is an extensively used technique for material modification. Using this method, we can tailor the properties of target materials, including morphological, mechanical, electronic, and optical properties. All of these modifications impel nanomaterials to be a more useful application to fabricate more high-performance nanomaterial-based devices. Ion implantation is an acc...

The nanostructure of amorphous carbon thin films is described in terms of a disordered nanometer sized conductive sp 2 phase embedded in an electrically insulating sp 3 matrix. It is shown that the degree of clustering and disorder within the sp 2 phase plays a determining role in the electronic properties of these films. Clustering of the sp 2 phase is shown to be important in explaining sever...

Hybrid electronic heterostructure films of semi- and superconducting layers possess very different properties from their bulk counterparts. Here, we demonstrate superconductivity in ferecrystals: turbostratically disordered atomic-scale layered structures of single-, bi- and trilayers of NbSe2 separated by PbSe layers. The turbostratic (orientation) disorder between individual layers does not d...