نتایج جستجو برای: electron relaxation time

تعداد نتایج: 2206802  

Journal: :The Journal of chemical physics 2015
Xunmin Guo Hailong Chen Xiewen Wen Junrong Zheng

An ultrafast two-dimensional visible/far-IR spectroscopy based on the IR/THz air biased coherent detection method and scanning the excitation frequencies is developed. The method allows the responses in the far-IR region caused by various electronic excitations in molecular or material systems to be observed in real time. Using the technique, the relaxation dynamics of the photo-excited carrier...

Journal: Polyolefins Journal 2021

In this work, the compatibility and crystallinity of low density polyethylene (LDPE) and polybutene-1 (PB-1) blends were studied. Various blends of LDPE/PB-1 containing 5, 10 and 20 wt.% PB-1 were prepared in a corotating twin-screw extruder and characterized by scanning electron microscopy (SEM), shear oscillation rheology and wide-angle X-ray diffractometry (WAXD). A matrix-droplet morphology...

2013
D. Osintsev V. Sverdlov S. Selberherr

We consider the impact of the surface roughness and phonon induced relaxation on transport and spin characteristics in ultra-thin SOI MOSFET devices. We show that the regions in the momentum space, which are responsible for strong spin relaxation, can be efficiently removed by applying uniaxial strain. The spin lifetime in strained films can be improved by orders of magnitude, while the momentu...

Journal: :iranian journal of radiology 0
li liu department of radiology, shanghai cancer center, fudan university, shanghai, china bo yin department of radiology, huashan hospital, fudan university, shanghai, china dao ying geng department of radiology, huashan hospital, fudan university, shanghai, china yi ping lu department of radiology, huashan hospital, fudan university, shanghai, china wei jun peng department of radiology, shanghai cancer center, fudan university, shanghai, china; department of radiology, shanghai cancer center, fudan university, shanghai, china. tel: +86-13817515007

conclusion in breast cancer after nac, the lesion t2 relaxation time was reduced in the responders, and this finding is potentially useful to assess the response to nac. results in 26 cases with nac, the mean lesion t2 relaxation time before nac was 81.34 ± 13.68 ms, compared with 64.50 ± 8.71 ms after nac. significant differences in the lesion t2 relaxation times existed between the pre- and p...

2005
Charles Tahan Robert Joynt

Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases s2DEGsd formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key parameter for these applications is the spin relaxation time. Here we apply the theory of D’yakonov and Perel’ sDPd to calculate the electron spin resonance...

Journal: :The journal of physical chemistry. B 2016
Chen-Chen Zho Benjamin J Schwartz

We use nonadiabatic mixed quantum/classical molecular dynamics to simulate recent time-resolved photoelectron spectroscopy (TRPES) experiments on the hydrated electron, and compare the results for both a cavity and a noncavity simulation model to experiment. We find that cavity-model hydrated electrons show an "adiabatic" relaxation mechanism, with ground-state cooling that is fast on the time ...

2004
J. Demsar D. Mihailovic V. V. Kabanov K. Biljakovic

We present a femtosecond time-resolved optical spectroscopy (TRS) as an experimental tool to probe the changes in the low energy electronic density of states as a result of short and long range charge density wave order. In these experiments, a femtosecond laser pump pulse excites electron-hole pairs via an interband transition in the material. These hot carriers rapidly release their energy vi...

2006
Marian Florescu Pawel Hawrylak

We report results of calculations of the effect of spin-orbit interaction on electron spin relaxation in a lateral quantum dot. Our study is motivated by puzzling results of high source-drain transport measurements of singlet-triplet transitions of two electrons in lateral and vertical devices that show a strong asymmetry as a function of the applied magnetic field. Using exact diagonalization ...

1999
B. Gonzalez V. Palankovski H. Kosina A. Hernandez S. Selberherr

We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as functions of the carrier and lattice temperatures, and in the case of semiconductor alloys, of the material composition. # 1999 Elsevier Science Ltd. A...

2016
Dinh Van Tuan Frank Ortmann Aron W. Cummings David Soriano Stephan Roche

The understanding of spin dynamics and relaxation mechanisms in clean graphene, and the upper time and length scales on which spin devices can operate, are prerequisites to realizing graphene-based spintronic technologies. Here we theoretically reveal the nature of fundamental spin relaxation mechanisms in clean graphene on different substrates with Rashba spin-orbit fields as low as a few tens...

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