Electron Back-Scatter Diffraction (EBSD) is a powerful technique that captures electron diffraction patterns from crystals, constituents of material. Captured patterns can then be used to determine grain morphology, crystallographic orientation and chemistry of present phases, which provide complete characterization of microstructure and strong correlation to both properties and performance of ...

Transmission electron backscattered diffraction, t-EBSD, in the scanning electron microscope, SEM, was initially described in 2010 [1]. After slow initial acceptance, the number of publications in which it is used is increasing markedly. Many of the first applications took advantage of the higher resolution of t-EBSD in the study of thin films [2], [3]. More recently it is being used for pre-sc...

transformation induced plasticity (trip) steels have a vast application in automotive industry because of theirhigh strength, high ductility and hence excellent energy absorption capacity. these characteristics of tripsteels are due to the existence of retained austenite in their microstructures in the ambient temperature, whichtransforms to the martensite phase during deformation. the microstr...

The microstructure with homogeneously distributed grains and less prior particle boundary (PPB) precipitates is always desired for powder metallurgy superalloys after hot isostatic pressing (HIPping). In this work, we studied the effects of HIPping parameters, temperature and pressure on the grain structure in PM superalloy FGH96, by means of scanning electron microscope (SEM), electron backsca...

Magnesium alloys are receiving increasing attention as a structural material in vehicles to reduce weight and increase fuel economy. Understanding the formability of lightweight alloys is one key to their successful introduction in vehicles. We present results of X-Ray diffraction and electron back-scatter diffraction texture measurements in as-cast and uniaxially compressed AZ31 for a variety ...

In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeate...

This work utilizes pulsed, melt-mediated laser crystallization techniques to control the spatial distribution of crystalline zones within an as sputterdeposited amorphous matrix. Since shape memory responses stem from crystallographic shifts, only the selectively crystallized regions exhibit these properties. This process provides not only spatial control over the shape memory response, but pot...

Electron backscatter diffraction (EBSD) in the scanning electron microscope is routinely used for microstructural characterisation of polycrystalline materials. Maps EBSD data are typically acquired at high stage tilt and slow scan speed, leading to drift distortions that obscure or distort features final microstructure map. In this paper, we describe TrueEBSD, an automatic postprocessing proce...