نتایج جستجو برای: effect transistors
تعداد نتایج: 1652097 فیلتر نتایج به سال:
List of publications 1. Zeis R, Siegrist T, Kloc Ch Single-crystal field-effect transistors based on copper phthalocyanine Field-effect studies on rubrene and impurities of rubrene submitted to Chemistry of Materials High-mobility field-effect transistors based on transition metal dichalco-genides Applied Physics Letters 84 (17): 3301-3303 6. Evaluation of single crystal and thin film field-eff...
Related Articles Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors Appl. Phys. Lett. 101, 243501 (2012) Reduced graphene oxide based flexible organic charge trap memory devices Appl. Phys. Lett. 101, 233308 (2012) Analyzing threshold pressure limitations in microfluidic transistors for self-regulated microfluidic circuits Appl. Phys. Lett. 101, 2341...
The piezoelectronic transistor (PET) has been proposed as a transduction device not subject to the voltage limits of field-effect transistors. The PET transduces voltage to stress, activating a facile insulator-metal transition, thereby achieving multigigahertz switching speeds, as predicted by modeling, at lower power than the comparable generation field effect transistor (FET). Here, the fabr...
A 20-band sp(3)d(5)s* spin-orbit-coupled, semiempirical, atomistic tight-binding model is used with a semiclassical, ballistic, field effect transistor (FET) model, to examine the ON-current variations to size variations of [110]-oriented PMOS nanowire devices. Infinitely long, uniform, rectangular nanowires of side dimensions from 3 to 12 nm are examined and significantly different behavior in...
Related Articles Correlating stress generation and sheet resistance in InAlN/GaN nanoribbon high electron mobility transistors Appl. Phys. Lett. 101, 113101 (2012) Nonmagnetic spin-field-effect transistor Appl. Phys. Lett. 101, 082407 (2012) Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon Appl. Phys. Lett. 100, 213107 (2012) Threshold voltage modulation mechan...
Related Articles Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors Appl. Phys. Lett. 101, 243501 (2012) Reduced graphene oxide based flexible organic charge trap memory devices Appl. Phys. Lett. 101, 233308 (2012) Analyzing threshold pressure limitations in microfluidic transistors for self-regulated microfluidic circuits Appl. Phys. Lett. 101, 2341...
In this review, recent advances in the development of electronic detection methodologies based on non-antibody recognition elements such as functional liposomes, aptamers and synthetic peptides are discussed. Particularly, we highlight the progress of field effect transistor (FET) sensing platforms where possible as the number of publications on FET-based platforms has increased rapidly. Biosen...
Related Articles Time-resolved hyperspectral fluorescence spectroscopy using frequency-modulated excitation J. Appl. Phys. 112, 013109 (2012) Potential distribution in channel of thin-film transistors Appl. Phys. Lett. 101, 013504 (2012) Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers Appl...
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