0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.09.033 ⇑ Corresponding author. Tel.: +91 11 24115580; fax E-mail addresses: [email protected] ( (R.S. Gupta). 1 Tel.: +91 11 24115580; fax: +91 11 24110606. In the work proposed, linearity performance of dual material gate (DMG) AlGaN/GaN HEMT has been analyzed and compared with the corresponding performance o...

A two-dimensional analytical model for the potential distribution along the bottom channel of the fully depleted region of dual material gate (DMG) SOI MESFET is presented. The potential distribution is modeled by solving the Poisson equation with proper boundary conditions. The model for the potential distribution is extended to derive an analytical expression for the threshold voltage. The ac...

Molecular logic gates, which have attracted increasing research interest and are crucial for the development of molecular-scale computers, simplify the results of measurements and detections, leaving the diagnosis of disease either "yes" or "no". Prion diseases are a group of fatal neurodegenerative disorders that happen in human and animals. The main problem with a diagnosis of prion diseases ...

In this paper, we propose a doping-less dual-material double-gate tunnel field-effect transistor with P+ pocket (PP-DMG TFET). This gate-engineered technique is typically used in MOSFET to improve device performance. The embedded at the source side enhance performance of pocket-engineered PP-DMG TFET device. paper compares four DG-TFET-based devices, i.e. single-material gate (SMG), (PP-SMG), (...

In this paper, the control over the second gate voltage in a dual-gate FET resistive mixer is employed for amplitude remodulating the response signal in a retrodirective array. A resistive mixer is integrated with an aperture coupled square patch, and a data signal voltage, Vg2s(t), is appropriately conceived in order to control the magnitude of the device time-varying output conductance. Measu...

To facilitate CMOS scaling beyond the 65 nm technology node, high-permittivity gate dielectrics such as HfO2 will be needed in order to achieve sub-1.3nm equivalent oxide thickness (EOT) with suitably low gate leakage, particularly for low-power applications. Polycrystalline silicongermanium (poly-SiGe) is a promising gate material because it is compatible with a conventional CMOS process flow,...