We generalize the Monte Carlo algorithm originally designed for small signal analysis of the three-dimensional electron gas to quasitwo-dimensional electron systems. The method allows inclusion of arbitrary scattering mechanisms and general band structure. Contrary to standard Monte Carlo methods to simulate transport, this algorithm takes naturally into account the fermionic nature of electron...

A novel 3D field effect transistor on SOI – screen-grid FET (SGrFET) – is proposed and an analysis of its DC behaviour is presented by means of 2D TCAD analysis. The novel feature of the SGrFET is the design of 3D insulated gate cylinders embedded in the SOI body. This novel gate topology improves efficiency and allows great flexibility in device and gate geometry to optimize DC performance. Th...

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To meet the performance requirements of low power mobile devices, a device with high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their subthreshold slope and transconductance compared MOSFETs. However, silicon-based have on-state current, which limits use in high-performance applications. overcome this limitation, using narrower band gap material like Ge can increas...

Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage propertie...

The efficient detection of charged biomolecules by biosensor with appropriate semiconducting nanomaterials and with optimum device geometry has caught tremendous research interest in the present decade. Here, the performance of various label-free electronic biosensors to detect bio-molecules is investigated by simulation technique. Silicon nanowire sensor, nanosphere sensor and double gate fiel...