S3. Calculated formation energies as a function of Fermi level for the substitutional dopants in monolayer phosphorene.

Organic Semiconductors In article number 2300084, Huan Wei, Zebing Zeng, Yugang Bai, Yuanyuan Hu, and co-workers report the discovery of organic superbases as ultraefficient n-dopants for semiconductors. The dopants result in record-high conductivity typical n-type semiconductors, showing doping efficiency three times higher than benchmark n-dopant N-DMBI. image illustrates n-doping P61CBM by d...

Lanthanide-doped nanoparticles exhibit unique luminescent properties, including large Stokes shift, sharp emission bandwidth, high resistance to optical blinking, and photobleaching, as well as the unique ability to convert long-wavelength stimulation into short-wavelength emission. These attributes are particularly needed for developing luminescent labels as alternatives to organic fluorophore...

Mixing of plastic ablator material, doped with Cu and Ge dopants, deep into the hot spot of ignition-scale inertial confinement fusion implosions by hydrodynamic instabilities is diagnosed with x-ray spectroscopy on the National Ignition Facility. The amount of hot-spot mix mass is determined from the absolute brightness of the emergent Cu and Ge K-shell emission. The Cu and Ge dopants placed a...

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction o...

We introduce a new class of spin-on dopants composed of organic, dopant-containing polymers. These new dopants offer a hybrid between conventional inorganic spin-on dopants and a recently developed organic monolayer doping technique that affords unprecedented control and uniformity of doping profiles. We demonstrate the ability of polymer film doping to achieve both p-type and n-type silicon by...

We report a pitch invariance in cholesteric liquid crystals (CLCs) independent of temperature by mixing two chiral dopants. One dopant tends to shorten the helical pitch of the CLC, but the other makes the pitch longer, with increasing temperatures. From an analysis of temperature dependencies of the pitch for each dopant, we determined the mixing ratio of two chiral dopants for the pitch invar...

We discuss the importance of distributed amplification for high-speed soliton communication systems through numerical simulations by considering the distributed gain provided by stimulated Raman scattering or erbium dopants. Hybrid amplification schemes are also considered. At a bit rate of 40 Gb/s, the use of distributed amplification is found to improve the transmission distance (deduced from...

We present first results of the analysis of molecular beam epitaxy-grown Be:GaAs delta-doped layers with atomic resolution. These were obtained using cross-sectional scanning tunneling microscopy. At low Be areal density, the width of the delta layers is 1 nm, whereas at higher Be areal densities the spread of the layers is appreciable and the widths are approximately 5 nm. This spreading is mo...