Critical stresses necessary to generate dislocation glide loops in Czochralski silicon containing oxide precipitates have been investigated. Using three-point bending and etching techniques, it was possible to determine the minimum shear stress required to generate dislocation glide loops from controlled distribution of precipitates under constant-stress conditions. The generation of glide disl...

Partially relaxed InGaAs/GaAs heterostructures with a small lattice mismatch (less than 1%), grown by metalorganic vapour-phase epitaxy have been studied by the transmission electron microscopy, atomic force microscopy as well as X-ray diffractometry. A regular network of 60° misfit dislocations formed at the (001) interface in two orthogonal 〈110〉 crystallographic directions has been revealed....

In this work we study a charged particle in the presence of both a continuous distribution of disclinations and a continuous distribution of edge dislocations in the framework of the geometrical theory of defects. We obtain the self-energy for a single charge both in the internal and external regions of either distribution. For both distributions the result outside the defect distribution is th...

Transmission electron microscopy techniques are applied to investigate three-dimensional (3D) microstructures of the GaN nonplanar substrate selectively grown by metalorganic chemical vapor deposition. Two-step lateral epitaxial overgrowth (LEO) has been utilized and optimized to fabricate fully coalesced nonplanar mesa substrate templates with the trapezoidal cross-section. All threading dislo...

The question addressed in this paper is that of the influence of the density of dislocations on the spin tunneling in Mn12 clusters. We have determined the variation in the mosaicity of fresh and thermally treated single crystals of Mn12 by analyzing the widening of low angle x-ray diffraction peaks. It has also been well established from both isothermal magnetization and relaxation experiments...

We present an experimental system suitable for producing spherical crystals and for observing the distribution of lattice defects (disclinations and dislocations) on a significant fraction (50%) of the sphere. The introduction of fluorescently labeled particles enables us to determine the location and orientation of grain boundary scars. We find that the total number of scars and the number of ...