If the nominal contact tractions at an interface are everywhere below the Coulomb friction limit throughout a cycle of oscillatory loading, the introduction of surface roughness will generally cause local microslip between the contacting asperities and hence some frictional dissipation. This dissipation is important both as a source of structural damping and as an indicator of potential frettin...

Graphene-based nanoelectromechanical systems (NEMS) have high future potential to realize sensitive mass and force sensors owing to graphene’s low mass density and exceptional mechanical properties. One of the important remaining issues in this field is how to achieve mechanical resonators with a high quality factor (Q). Energy dissipation in resonators decreases Q, and suppressing it is the ke...

The phenomenological energy dissipation in QCD jet evolution taking into account the colour coherence is considered and the corresponding modified parton multiplicity and distribution function are computed.

A model is investigated describing the resistive dissipation of a finite, two-dimensional current sheet subject to suddenly enhanced resistivity. The resistivity rapidly diffuses the current to a distance where it couples to fast magnetosonic modes. The current then propagates away as a sheath moving at the local Alfvén speed. A current density peak remains at the X-point producing a steady ele...

Bit swapping linear feedback shift register (BS-LFSR) is employed in a conventional linear feedback shirt register (LFSR) to reduce its power dissipation and enhance its performance. In this paper, an enhanced BS-LFSR for low power application is proposed. To achieve low power dissipation, the proposed BS-LFSR introduced the stacking technique to reduce leakage current. In addition, three diffe...

During the COllrse of an inves tigation of differentlv compounded rubber-filler systems. it was obs;rved that specimens of the sarno composition som etimes showed large differences in their values of both dielectric constant and of diss ipa tion factor. Tho most likely explanation was that these electrical properties wero affected by the amount of flow in a given direcLion produced during manuf...

Direct numerical simulations (DNS) of a shear layer with salt-fingering-favorable stratification have been performed for different Richardson numbers Ri and density ratios Rr. In the absence of shear (Ri 5 ‘), the primary instability is square planform salt fingering, alternating cells of rising and sinking fluid. In the presence of shear, salt fingering takes the form of salt sheets, planar re...

Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the reverse-biased source barrier has a potentially high positive temperature coefficient, which may...