نتایج جستجو برای: dimensional fet model

تعداد نتایج: 2410851  

2011
Heinrich Kovar

FUS, EWS, and TAF15 form the FET family of RNA-binding proteins whose genes are found rearranged with various transcription factor genes predominantly in sarcomas and in rare hematopoietic and epithelial cancers. The resulting fusion gene products have attracted considerable interest as diagnostic and promising therapeutic targets. So far, oncogenic FET fusion proteins have been regarded as str...

2015
Christopher J. Henry James S. Koopman

Choosing between strategies to control HIV transmission with antivirals requires understanding both the dynamics affecting those strategies' effectiveness and what causes those dynamics. Alternating episodes of high and low contact rates (episodic risk) interact with increased transmission probabilities during early infection to strongly influence HIV transmission dynamics. To elucidate the mec...

Journal: :Chest 1991
J Mortensen M Falk S Groth C Jensen

We studied the effects of two chest physiotherapy regimens on whole lung and regional tracheobronchial clearance (TBC) in ten patients with cystic fibrosis. The regimens were given on two separate days and consisted of 20 min of (1) postural drainage and the forced expiration technique (PD + FET), and (2) positive expiratory pressure (PEP-mask) and FET (PEP + FET). A third day served as control...

2014
Wuhua Ni Shiquan Xiao Xiufang Qiu Jianyuan Jin Chengshuang Pan Yan Li Qianjin Fei Xu Yang Liya Zhang Xuefeng Huang

During the last decades, many studies have shown the possible influence of sperm DNA fragmentation on assisted reproductive technique outcomes. However, little is known about the impact of sperm DNA fragmentation on the clinical outcome of frozen-thawed embryo transfer (FET) from cycles of conventional in vitro fertilization (IVF) and intra-cytoplasmic sperm injection (ICSI). In the present stu...

2013
Katsuhiko Nishiguchi Hiroshi Yamaguchi Akira Fujiwara Herre S. J. van der Zant Gary A. Steele

We demonstrate high-speed charge detection at room temperature with single-electron resolution by using a radio-frequency field-effect transistor (RF-FET). The RF-FET combines a nanometerscale silicon FET with an impedance-matching circuit composed of an inductor and capacitor. Driving the RF-FET with a carrier signal at its resonance frequency, small signals at the transistor’s gate modulate t...

Journal: :international journal of pediatrics 0
maryam hojati phd student in clinical psychology, noore hedayat center, mashhad, iran.

introduction: autism spectrum disorders (asd) belong to the pervasive neurodevelopmental disorders. the prevalence of asd has increased significantly throughout recent decades, bringing the overall estimated prevalence to 11.3 per 1000 children. asd is characterized by severe difficulties in reciprocal social interaction, stereotyped patterns of behavior and profound impairments in verbal and n...

Journal: :Journal of rehabilitation research and development 2003
Mirjana B Popovic Dejan B Popovic Thomas Sinkjaer Aleksandra Stefanovic Laszlo Schwirtlich

This paper describes a clinical randomized single-blinded study of the effects of Functional Electrical Therapy (FET) on the paretic arms of subjects with acute hemiplegia caused by strokes. FET is an exercise program that comprises voluntary arm movements and opening, closing, holding, and releasing of objects that are assisted by a neural prosthesis (electrical stimulation). FET consisted of ...

2010
Kiyeol Kwak Kyoungah Cho Sangsig Kim

In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter's photocurrent efficiency by adjusting the g...

2008

In this work, we explore various optimization techniques using bandgap engineering to enhance the performance of tunnel FETs (T-FET) using extensive device simulations. We show that the heterostructure (Si1-γGeγ source or drain) tunnel FET (HT-FET) architecture allows scaling of the device to sub 20 nm gate length regime. N-channel HT-FET is optimized to meet ITRS low standby power and high per...

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