Al2O3 doped Ba0.5Sr0.5TiO3 ~BST! thin films, with different Al2O3 contents, were deposited on ~100! LaAlO3 substrates by the pulsed laser deposition technique to develop agile thin films for tunable microwave device applications. The dielectric properties of Al2O3 doped BST films were determined with a nondestructive dual resonator near 7.7 GHz. We demonstrated that the Al2O3 doping plays a sig...

ing dielectric permittivity and loss tangent of embedded passive materials. The measurements are made in an APC-7 coaxial configuration where the test specimen represents a load terminating an air-filled coaxial transmission line. The method is suitable for testing high dielectric constant (high-k) polymer-composite materials having nominal thickness of 1 μm to 300 μm at frequencies of 100 MHz ...

The pull-in voltage instability associated with a simple MEMS device, consisting of a thin dielectric elastic membrane supported above a rigid conducting ground plate, is analyzed. The upper surface of the membrane is coated with a thin conducting film. In a certain asymptotic limit representing a thin device, the mathematical model consists of a nonlinear partial differential equation for the ...

[email protected] Abstract – The CdO thin films were deposited using NaOH as the complexing agent by Successive Ionic Layer Adsorption and Reaction (SILAR) method. The UV-VIS-NIR spectroscopy was used for film characterization. The deposited CdO thin film shows high absorbance in the UV region and low in the visible to near IR region of the spectroscopy. The energy band gap of the deposi...

The Tunneling-Dielectric TFT (TDTFT), that has thin dielectric films at both ends of the channel fabrication area, was fabricated with 1.7 nm SiNX film by LPCVD method. The conduction mechanism of the drain currents was examined in the temperatures from 293 to 623 K experimentally and theoretically. The Id-Vg characteristics were reproduced by the direct tunneling (DT) via SiNX film with an ass...

Enhanced optical transmission (EOT) through a single aperture is usually achieved by exciting surface plasmon polaritons with periodic grooves. Surface plasmon polaritons are only excited by p-polarized incident light, i.e. with the electric field perpendicular to the direction of the grooves. The present study experimentally investigates EOT for s-polarized light. A subwavelength slit surround...

We have fabricated advanced metal–insulator–metal (MIM) capacitors with ultra-thin (200 Å) remote-PECVD Si3N4 dielectric layers having excellent electrical properties. The breakdown field strength of MIM capacitors with 200-Å-thick Si3N4 was larger than 3.5 MV/cm, which indicates the excellent quality of the deposited Si3N4 film. The main capacitance per unit area extracted by radio frequency (...

This work describes the application of two different test structures to execute broadband microwave measurements of the dielectric constant of ceramic thin films. Coplanar waveguide probes and vector network analyzer were used to measure the dielectric constant versus frequency of thin films of lead zirconate titanate and zirconium titanate, fabricated by sol gel methods. One-step lithography w...

This paper reports the characterization of a photosensitive benzocyclobutene (BCB), a low dielectric constant spin-on polymer for use as interlayer dielectric in the microelectronics industry. Research work is divided into three main sections. First, BCB thin film characterization was done to investigate the effects of curing conditions on BCB film thickness, dielectric properties, optical prop...

Organic-based flexible dielectric films with high permittivity (e) are desirable for future applications of organic thin-film transistors, such as smartcards and radio frequency identification (RFID) tags, that concurrently desire flexible or conformable substrates. Advances in the development of all-polymer field-effect transistors (PFETs) have been particularly significant for their potential...