Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical red...

whereas in electrical discharge machining (edm) the heat flux entering the workpiece is extremely high, the fourier heat conduction model may fails. this article reports on determination of temperature distribution in the workpiece due to edm using non-fourier heat conduction model. equations are solved by deriving the numerical solution. the temperature layers and profiles of sample calculatio...

in this paper, a numerical solution of an inverse non-dimensional heat conduction problem by spline method will be considered. the given heat conduction equation, the boundary condition, and the initial condition are presented in a dimensionless form. a set of temperature measurements at a single sensor location inside the heat conduction body is required. the result show that the proposed meth...

It is known that branching strands of cardiac tissue can form a substrate for very slow conduction. The branches slow conduction by acting as current loads drawing depolarizing current from the main strand ("pull" effect). It has been suggested that, upon depolarization of the branches, they become current sources reinjecting current back into the strand, thus enhancing propagation safety ("pus...

With the continuous development of CMOS technology, feature size MOSFETs is continuously shrunk, short channel effects become more and serious, which makes static power consumption increase now becomes main source integrated circuits. At present, performance binary logic processors nearly reaching bottleneck; therefore study ternary a research hotspot to promote high low Compared with logic, po...

Memristive devices are two-terminal that can change their resistance state upon application of appropriate voltage stimuli. The be tuned over a wide range enabling applications such as multibit data storage or analog computing-in-memory concepts. One the most promising classes memristive is based on valence mechanism in oxide-based devices. In these devices, configurational oxygen defects, i.e....