نتایج جستجو برای: conduction band nonparabolicity
تعداد نتایج: 169137 فیلتر نتایج به سال:
Bulk and surface sensitive x-ray spectroscopic techniques are applied in tandem to show that the valence band edge for In2O3 is found significantly closer to the bottom of the conduction band than expected on the basis of the widely quoted bulk band gap of 3.75 eV. First-principles theory shows that the upper valence bands of In2O3 exhibit a small dispersion and the conduction band minimum is p...
Determination of the small band gap of carbon nanotubes using the ambipolar random telegraph signal.
The ambipolar random telegraph signal (RTS) (i.e., RTS in both hole conduction at negative gate biases and electron conduction at positive gate biases) is observed in an ambipolar carbon nanotube field-effect transistor (CNT-FET). Then, the ambipolar RTS is used to extract the small band gap of the SWNT. The determination of the small band gap CNT using RTS demonstrates a potentially high accur...
In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, as well as in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination...
There is a great interest in the electronic properties of conjugated polymers. Numerous works on the electronic and conduction properties of single-chain conjugated polymers have been published. From an electronic conduction point of view, these systems are quasi-one dimensional. The aim of this paper is to try to investigate corresponding properties in conducting polymers in higher of one-di...
NAGAI, T., AND C. L. PROSER. Patterns of conduction in smooth muscle. Am. J. Physiol. 204(5): 9’0-914. 1963. -In sheets of circular intestinal muscle, electrical waves conduct in all directions, much faster and with less decrement in the long than in the transverse axis of the fibers. Need for interfiber summation is shown by failure to initiate conducted spikes with stimulating electrodes less...
We present a modeling scheme for simulating ballistic hole transport in thin-body fully depleted silicon-on-insulator pMOSFETs. The scheme includes all of the quantum effects associated with hole confinement and also accounts for valence band nonparabolicity approximately. This simulator is used to examine the effects of hole quantization on device performance by simulating a thin (1.5-nm) and ...
We report hole effective mass calculations of Si12xCx and Si12yGey alloys. All calculations are based on a 16316 Hamiltonian matrix constructed from the linear combination of atomic orbital approximation with spin-orbit interaction taken into consideration. The 1 meV constant energy surfaces below the valence band edge are used to determine the nominal hole effective masses. The effective masse...
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