In order to enhance the viability of this paper for that issue, we suggest adding this to the beginning of the abstract: “Binary semiconductors with (AB and AB) composition and ternary semiconductors (ABC2 and ABC2) composition, owing to their devices such as photonic crystals, wave guides, solar cells and detectors, are technologically important materials. The recent successful fabrication of ...

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Si-Ge-Sn alloys can achieve bandgaps in the 1eV range and can facilitate the integration of III-V materials with both Ge and Si substrates. The development and current status of Si-Ge-Sn epilayer growth at Translucent is presented. The main aims of this work are the development of infrared absorbers with bandgaps below that of Ge for infrared detectors, 1 eV semiconductor materials for photovol...

The electrochemical behavior of ZnTe and CdTe compound semiconductors dissolved in molten ZnCl(2) and equimolar CdCl(2)-KCl, respectively, was examined. In these melts dissolved Te is present as the divalent telluride anion, Te(2-), which was found able to be converted to elemental metal by electrochemical oxidation at the anode. ZnTe-ZnCl(2) melts were studied at 500 °C by standard electrochem...

Cross-sectional TEM studies of ion implantation induced amorphization in a large number of semiconductors have been performed. Samples of Si, AlAs, GaAs, GaP, GaSb, InP, InAs, and ZnSe were simultaneously implanted at 77 K with 20 keV Si at doses between 1 x 10/cm and 1 x 10/cm. A dose of 1 x 10/cm minimized the ion beam induced epitaxial crystallization and sputtering effects. The depth of the...