نتایج جستجو برای: cmos hv m 180
تعداد نتایج: 595841 فیلتر نتایج به سال:
Abstract— A low power and high gain transimpedance amplifier (TIA) in 0.18μm CMOS technology is presented. TIA with better performance is realized by reducing the effects of input parasitic capacitor. A negative admittance output stage enables the transimpedance gain and the bandwidth to be improved. Cadence tools were conducted for this proposed TIA by utilizing RF transistor model based on 0....
M. L. Laanen [email protected] Institute for Environmental Sciences, Vrije Universiteit Amsterdam, De Boelelaan 1087, 1081 HV Amsterdam, The Netherlands Current address: Water Insight BV, Marijkeweg 22, 6709 PG Wageningen, The Netherlands S. W. M. Peters Institute for Environmental Sciences, Vrije Universiteit Amsterdam, De Boelelaan 1087, 1081 HV Amsterdam, The Netherlands A. G. Dekker CS...
This paper describes CMOS Active Pixel Sensor (APS) that has huge demand in imaging systems. The pixel architecture consists of number of NMOS transistors and reverse biased p-n junction diode act as photo sensing element designed in 0.18um CMOS technology. The (64 H X64 V ) pixel array have presented and described. The sensor design contains 5T pixel architecture to investigate the effects by ...
The DESY II Test Beam Facility is a key infrastructure for modern high energy physics detector development, providing particles with small momentum spread in range from 1 to 6 GeV user groups e.g. the LHC experiments and Belle as well generic R&D. telescopes are provided all three test beam areas precise tracking reference without time stamping, triggered readout of > 115 $\mu$s. If highest ava...
This paper discusses some of the advantages and of the disadvantages of using a CMOS process in the 180 – 100 nm range for the design of analog blocks in mixed-mode integrated circuits.
هدف از این مقاله، ارائه یک تکنیک طراحی برای ساختن مدار CMOS OTA است که به صورت الکترونیکی و خطی قابل تنظیم میباشد. هدایت انتقالی ((gm در مدار، مستقیما به جذر جریان بایاس بستگی دارد. در این مقاله برای ایجاد ولتاژ خروجی ماکزیمم و ایجاد یک گستره هدایت انتقالی به صورت تنظیمی و خطی از مدار CMOS OTA همسان استفاده میگردد. سپس تغییر هدایت انتقالی CMOS OTA مورد نظر و تاثیر این تغییر در عملک...
The MALTA family of Depleted Monolithic Active Pixel Sensor (DMAPS) produced in Tower 180 nm CMOS technology targets radiation hard applications for the HL-LHC and beyond. Several process modifications front-end improvements have resulted hardness up to $2 \times 10^{15}~1~\text{MeV}~\text{n}_{eq}/\text{cm}^2$ time resolution below 2 ns, with uniform charge collection efficiency across size $36...
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