The high field properties of carbon nanotube (CNT) network thin film transistors (CN-TFTs) are important for their practical operation, and for understanding their reliability. Using a combination of experimental and computational techniques we show how the channel geometry (length L(C) and width W(C)) and network morphology (average CNT length L(t) and alignment angle distribution θ) affect he...

Experiments are described in this paper whose results suggest a clear mathematical relationship between total circuit resistance (including the capacitor’s ESR) and the voltage at which a capacitor is likely to break down. Specifically, the relationship defines how much each capacitor’s (not precisely known) breakdown voltage is affected by changes in circuit resistance. Since a factor that str...

We present results of an experimental and theoretical study of the temperature dependence of the off-state breakdown voltage of InAlAsDnGaAs high electron mobility transistors (HEMTs). We find that the breakdown voltage (BV) has a negative temperature coefficient that is more prominent for lower values of the extrinsic sheet carrier concentration (nJ. Structural parameters such as the insulator...

Degradation of RF accelerating cavities caused by field emission currently limits the design of future linear accelerators. When field emission is the problem, foreign particles often deserve the blame, but they can be ”processed” away if the cavity electric field is high enough to initiate voltage breakdown near the particle site, in which case the troublesome particle vaporizes, leaving behin...

In the past few years gas insulated high voltage circuit breakers have improved considerably, in particular with respect to required drive energy for operation, compactness and reliability. A further reduction in size implies increasing operational field stress inside the breaker and, thus, a reduction in built-in safety margins. If the design comes closer to its physical limits, in particular ...

Abstract The arc propulsion system needs a high-voltage (3800 V) pulse to break down the working medium in thruster and form stable arc. power control unit (ATPU) is prone producing high voltage discharge when output. According breakdown mechanism, this paper puts forward measures prevent breakdown.

The authors investigate the effect of the thermal boundary resistance between the GaN layer and the substrate on the current–voltage characteristics of GaN MESFETs. Using material specific models for carrier drift-diffusion and thermal conductivity the authors determine the dependence of the breakdown voltage on thermal boundary resistance. The mechanism of the thermal breakdown in GaN transist...