this research was done in order to submit a model for salinity map made with tm satellite data and salinity values in a buienzahra. the necessary processings such as principal component analysis and producing of different indices was done on the main bands. the 38 soil samples using random sampling (with 10×10 km dimension) from different horizons were designed and performed on the study area. ...

Silicon (Si) and germanium (Ge) semiconductor nanowires can be utilized in next generation electronic, photonic, and energy conversion devices. Si, Ge, and Si1-xGex materials are also well studied and currently used in industry. Optoelectronic properties, such as the band gap, can be tuned by modulating the alloy composition, thus allowing for a wider range of uses. The focus of this project wa...

One of the main requirements for ultra-large-scale integrations (ULSIs) is atomic-order control of process technology. Our concept of atomically controlled processing is based on atomic-order surface reaction control by CVD. By ultraclean low-pressure CVD using SiH4 and GeH4 gases, high-quality low-temperature epitaxial growth of Si1−xGex (100) (x = 0–1) with atomically flat surfaces and interf...

In this work, for the first time, the valence band offset, ∆EV, between strained Si and strained Si1-yGey on relaxed Si1-xGex, has been measured using a combination of experimentation and modeling. Such structures have been shown to offer large mobility enhancements for both electrons and holes, and knowledge of the band parameters is critical in order to optimize and predict device behavior [1...

Boron penetration through thin gate oxides in p-channel MOSFETs with heavily boron-doped gates causes undesirable positive threshold voltage shifts. P-channel MOSFETs with polycrystalline Si1 x yGexCy gate layers at the gate-oxide interface show substantially reduced boron penetration and increased threshold voltage stability compared to devices with all poly Si gates or with poly Si1 xGex gate...

The structure of the Sn1 xGex random alloys is studied using density functional theory and the coherent potential approximation. We report on the deviation of the Sn1 xGex alloys from Vegard’s law, addressing their full compositional range. The findings are compared to the related Si1 xGex alloys and to experimental results. Interestingly, the deviation from Vegard’s law is quantitatively and q...