Tunneling spectroscopy has been used to detect the photoexcitation of charge carriers in the wide band-gap semiconductors, ZnO and cubic SiC. Because the process is energy sensitive, valence-toconduction hand or defect charge transfer transitions may be selectively excited and detected with the scanning tunneling microscope. Two types of transitions were detected which change the tunneling resp...

The electronic structure of single InSb quantum dots (QDs) with diameters between 3 and 7 nm was investigated using atomic force microscopy (AFM) and scanning tunneling spectroscopy (STS). In this size regime, InSb QDs show strong quantum confinement effects which lead to discrete energy levels on both valence and conduction band states. Decrease of the QD size increases the measured band gap a...

Tunneling spectroscopy has been used to detect the photoexcitation of charge carriers in the wide band-gap semiconductors, ZnO and cubic SiC. Because the process is energy sensitive, valence-toconduction hand or defect charge transfer transitions may be selectively excited and detected with the scanning tunneling microscope. Two types of transitions were detected which change the tunneling resp...

A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison of the theory with recently reported experimental results. Observed resonant tunneling and negative differential resistance in...

Static leakage currents represent a major issue in nano-scale CMOS. In digital VLSI circuits, the most relevant contributions to the overall leakage current are: sub-threshold conduction, gate current and band-to-band-tunneling (BTBT) current, which flows from drain (source) to the substrate through the reverse biased diffusion junctions [1]. While the last one has been recognized as an importa...

As we enter the nanoscale regime, power reduction is of increasing importance, but the established leakage reduction techniques will become less effective. Subthreshold leakage is being joined by band-to-band tunneling and gate leakage as the primary leakage mechanisms. The increased significance of these leakage components threatens the usefulness of some traditional leakage reduction techniqu...