نتایج جستجو برای: band gap

تعداد نتایج: 261994  

The effect of evaporation rate on structural, morphological and optical properties of electron beam evaporated CdS thin films have been investigated. CdS thin film deposited by electron beam evaporation method in 12nm/min and 60nm/min evaporation rates on glass substrates. X-ray diffraction, scanning electron microscopy, UV-Vis-NIR spectroscopy and Atomic Force Microscopy were used to character...

K . Zare M. Monajjemi M. SeyedHosseini

To investigate the electromagnetic interaction of molecules inside the nanotubes, first, the structure of nanotubes B16N16 was optimized with hybrid density functional theory (B3LYP) using the EPR-II basis set, then Cu, Cu+, Cu++ were located in nanotube and we studied the total energy, band gap energy, electrical potential, changes of band gap energy in terms of total energy and dipole moment ...

Journal: :international journal of nanoscience and nanotechnology 2010
p. sharma s. singh h. s.virk

cadmium sulphide (cds) nanoparticles were prepared using microemulsion method using cadmium chloride as cadmium source and sodium sulphide as sulphur source. the obtained nanoparticles structures were characterized by x-ray diffraction (xrd) and transmission electron microscopy (tem) whereas optical characterization was done by ultra violet-visible absorption. xrd result shows that cds nanopart...

Journal: :international journal of nanoscience and nanotechnology 2007
n. jeyakumaran b. natarajan s. ramamurthy v. vasu

porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. sem, ftir and pl have been used to characterize the morphological and optical properties of porous silicon. the influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. it is observed that pore size increases with etching tim...

Journal: :Photonics Research 2018

Journal: :Solar Energy Materials and Solar Cells 2016

Journal: :Physical Review Special Topics - Accelerators and Beams 2001

2013
Ruge Quhe Jianhua Ma Zesheng Zeng Kechao Tang Jiaxin Zheng Yangyang Wang Zeyuan Ni Lu Wang Zhengxiang Gao Junjie Shi Jing Lu

There is a tunable band gap in ABC-stacked few-layer graphene (FLG) via applying a vertical electric field, but the operation of FLG-based field effect transistor (FET) requires two gates to create a band gap and tune channel’s conductance individually. Using first principle calculations, we propose an alternative scheme to open a band gap in ABC-stacked FLG namely via single-side adsorption. T...

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