In this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD) laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 μm and operated up to 120 K in pulsed mode, which is the highest working temperature for this type of QD laser. The modal gain was estimated to be 2.9 cm per QD layer. A large bl...

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Herein, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2...

We demonstrate an InAs/GaAs quantum dot sQDd laser based on a strain-compensated, three-stack active region. Each layer of the stacked QD active region contains a thin GaP sDao=−3.8% d tensile layer embedded in a GaAs matrix to partially compensate the compressive strain of the InAs sDao=7% d QD layer. The optimized GaP thickness is ,4 MLs and results in a 36% reduction of compressive strain in...

In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved. The emission energy of the first layer of QD forming the molecule can be tuned by the deposition of controlled amounts of InAs at a nanohole template formed by GaAs droplet epitaxy. The QD of the s...

Ten-layer InAs/In0.15Ga0.85As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 lm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 · 2,000 lm) delivered total output power of up to 272.6 mW at 10 C at 1.3 lm. Under p...

We systematically study the influence of simultaneously modulating input laser intensity and quantum-dot (QD) resonance frequency on mean-field dynamics, fluctuation energy transfer entanglement in a optomechanical semiconductor resonator embedded with QD. show that modulation hybrid system can be engineered to attain desired values control among various degrees freedom. A remarkably high degre...

Charge carriers trapped at localized surface defects play a crucial role in quantum dot (QD) photophysics. Surface traps offer longer lifetimes than band-edge emission, expanding the potential of QDs as nanoscale light-emitting excitons and qubits. Here, we demonstrate that nonradiative plasmon mode drives transfer from two-photon-excited to trap states. In plasmonic cavities, emission dominate...

The engineering of quantum dot solids with low defect concentrations and efficient carrier transport through a ligand strategy is crucial to achieve efficient quantum dot (QD) optoelectronic devices. Here, we study the consequences of various surface ligand treatments on the light emission properties of PbS quantum dot films using 1,3-benzenedithiol (1,3-BDT), 1,2-ethanedithiol (EDT), mercaptoc...

We have observed that, in zero magnetic field, a dc bias across a lateral confmed quantum dot (QD) splits each resonant peak in the differential conductance versus the gate voltage measurement into two. The splitting is nearly linear with the applied bias V, . Temperature-dependence study indicates that the corresponding energy separation between the two splitting peaks is close to eV, . A mode...

We present theoretical and experimental studies of the effect of the density of states of a quantum dot (QD) on the rate of single-electron tunneling that can be directly measured by electrostatic force microscopy (e-EFM) experiments. In e-EFM, the motion of a biased atomic force microscope cantilever tip modulates the charge state of a QD in the Coulomb blockade regime. The charge dynamics of ...