in this paper, the results of design and implementation of the subsystems for generating loran pulse are proposed based on method of carrier’s pulse width change. in order to generate the desired pulse, firstly a pwm signal generated and then it is applied to a class-d switching amplifier. the results show that by generating appropriate pulses in digital fpga subsystem for application in switch...

In this paper two different Gm-C chopper amplifiers, aimed for signal amplification in implantable devices are presented. The first one is a pre-amplifier for ENG signals that was fabricated in a 1.5 μm technology. Measurements of this amplifier showed input noise of 1.2 nVHz and 2.5 μV offset with a power consumption of 28 mW. The second is a complete amplifier for EEG signals designed in a 0....

Nonlinearity estimation and spectral regrowth prediction are crucial to power amplifier linearization. The correlation techniques shown here can estimate amplifier nonlinearity and predict out-of-band power spectrum. Crosscorrelation is performed between the output envelope and a test sequence generated from the input signal and can be carried out in background during amplifier operations. The ...

Low noise amplifier when simulated for system level configuration, the scattering matrix in general and scattering parameters in specific play vital role in performance of low noise amplifier for various frequency bands. In this paper the scattering parameter performance was analyzed for C-band for recent process technologies available for CMOS and BiCMOS for IEEE 802.11 b/g.

This paper presents a broadband GaN pseudo high-electron-mobility transistor (pHEMT) two-stage driver amplifier based on an enhanced feedback technique for wideband system. Through well-designed parameter values of the and matching structure circuit, relatively flat frequency response was obtained over wide band. Simultaneously, in order to reduce fluctuation current caused by environmental tem...

A class-F high efficiency GaN power amplifier (PA) for dual band operation at 2.14 GHz and 2.35 GHz is proposed. A novel dual band harmonic-rejection load network, which controls the terminating impedances of the second and third harmonics, and contributes greatly to efficiency improvement of PA, is described. In addition, a matching network which guarantees the high efficiency and gain of PA f...

Introduction. A method for designing power amplifiers use in the transmitting channels of X-band transceiver modules is investigated. The design process was aimed at optimizing relationship between basic amplifier characteristics, including operating frequency band, output level, linearity, high harmonics suppression, etc. Aim . Investigation a an UHF amplifier, which capable its main character...

In this study, a 1 W W-band solid-state power amplifier (SSPA) was developed for application in compact pulse Doppler radar. The SSPA up-converted the X-band signal to with multiplier (×8) and then amplified high output using an amplifier. To apply radar, which transmits receives signals single antenna, noise reduced by controlling drain voltage of according repetition frequencies. average obta...

This paper reviews the major contributions proposed in literature for implementing multi-band low noise amplifiers in CMOS technology. Concurrent, switched and switched concurrent low noise amplifiers are investigated. Advantages and drawbacks are also discussed. The article tries to offer good insights on the implementation of multi-band low noise amplifiers. Keywords-CMOS; low noise amplifier...

We report a fiber-optic parametric amplifier with ultra-broad and flat gain band by using a longitudinally tailored optical fiber. The parametric amplifier has been designed from realistic numerical simulations combined with an inverse algorithm to obtain a flat and wide gain band through fiber dispersion management. We experimentally report ~12 THz gain bandwidth on the Stokes side of the pump...