Avalanche photodiodes are widely used as practical detectors of single photons. Although conventional devices respond to one or more photons, they cannot resolve the number in the incident pulse or short time interval. However, such photon number resolving detectors are urgently needed for applications in quantum computing, communications and interferometry, as well as for extending the applica...

Planar InP/InGaAs avalanche photodiodes are widely used for high-speed optical receivers in optical fiber communication systems. Even though these avalanche photodiodes offer the excellent characteristics in high-speed operation, the performance metrics are affected by manufacturing parameter variations considerably. In this paper, the effects of manufacturing variations on the device performan...

An avalanche photodiode (APD) based on an InGaAs/InGaAsP/InP structure containing separated absorption, charge and multiplication layers (SACM) was designed, fabricated and tested. The InGaAsP charge layer at the heterointerface between the InGaAs absorption and InP multiplication region allows optimization of the electric field distribution and suppression of the carrier capture at the heteroi...

In this article, a fully integrated single photon detector including a silicon avalanche photodiode and a quenching circuit is presented. The low doping concentrations, inherent to the complementary metal–oxide–semiconductor ~CMOS! high-voltage technology used, favor the absorption of red and infrared photons at the depletion region. The detection probability rapidly increases with excess bias ...