نتایج جستجو برای: assisted chemical etching
تعداد نتایج: 512312 فیلتر نتایج به سال:
This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic sub...
In this paper, the moderately and lightly doped porous silicon nanowires (PSiNWs) were fabricated by the 'one-pot procedure' metal-assisted chemical etching (MACE) method in the HF/H2O2/AgNO3 system at room temperature. The effects of H2O2 concentration on the nanostructure of silicon nanowires (SiNWs) were investigated. The experimental results indicate that porous structure can be introduced ...
We report the effect of chemical etching of p-GaN using molten KOH:NaOH solution on leakage currents, light output power, and electrostatic discharge ESD characteristics of GaN light-emitting diodes LEDs . Photoluminescence and capacitance–voltage measurement indicated that a deep donor–acceptor pair DDAP was densely concentrated near the p-GaN surface region 18 nm and the defects were effectiv...
The metal-assisted chemical etching (MACE) technique is commonly employed for texturing the wafer surfaces when fabricating black silicon (BSi) solar cells and considered to be a potential improve efficiency of traditional Si-based cells. This article aims review MACE along with its mechanism Ag-, Cu- Ni-assisted etching. Primarily, several essential aspects fabrication BSi are discussed, inclu...
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