In the last few years aluminium nitride (AlN) has attracted much attention due to its extremely large direct band gap of approximately 6.0 eV and its impressive chemical and thermal stability. Thus AlN and AlxGa1-xN ternary alloys are promising materials for high-power high temperature electronic applications and optoelectronic devices in UV range. For group-III nitride wafers are still not ava...

1 Heirarchical Materials Structure at Multiple Length Scales a). Ide-alized graphene crystalline structure. b). Atomic model for a five-fold icosahedral Al-Ag quasicrystals. c). Delamination cracks in h-BN particles subjected to compressive stress in the (0001) planes (within a silicon nitride particulate-reinforced silicon carbide composite. d). Electron diffraction pattern of an icosahedral Z...

The U.S. Spallation Neutron Source (SNS) is an accelerator-based, pulsed neutron-scattering facility currently in the process of ramping up neutron production. To meet present and future beam current and reliability requirements we are developing an RF-driven, H ion source based on a ceramic aluminium nitride (AlN) plasma chamber surrounded by an external RF antenna. This report recounts the de...

The RF band pass filters are important for wireless communication applications. They can be realized using Thin Film Bulk Acoustic Resonator (TFBAR).TFBAR is designed using Aluminium Nitride (AlN) and electrodes of piezoelectric material are made with Platinum (Pt).Various modelling techniques has been used for realizing three layered TFBAR structure. Modified Butter worth‐v...