Nitride semiconductors offer many unique and beneficial properties for new generation electronic devices [1]. GaN-based HEMTs are contenders for replace existing Si and GaAs devices in high-power RF applications. AlGaN/GaN High Election Mobility Transistors (HEMTs) are devices designed for applications where high-power and high-frequency devices are needed. AlGaN/GaN HEMTs take advantage of a t...

In this study, the forward bias current-voltage-temperature (I-V-T) characteristics of (Mo/Au)– AlGaN/GaN high electron mobility transistors (HEMTs) have been investigated over the temperature range of 100-450K. The barrier height (Φb), ideality factor (n), series resistance (Rs) and shunt resistance (Rp) of (Mo/Au)–AlGaN/GaN HEMTs have been calculated from their experimental forward bias curre...

Abstract This letter has studied the gate reliability of p-GaN high electron mobility transistors (HEMTs) influenced by Mg doping level at initial growth stage layer. Normally-off HEMTs with fabricated relatively low and concentration have been analyzed compared based on their performances various statuses as-fabricated, forward step-stressed, reverse step-stressed long-term stressed. It reveal...

Replacing SiC substrates with the highest thermal conductivity material available, diamond (κ up to 2000 W/mK), will result in significantly lower thermal resistance AlGaN/GaN HEMTs. In this work we combine Raman thermography and thermal simulation to assess the thermal resistance of state-of-the-art GaN-ondiamond HEMTs. INTRODUCTION The RF output power density achievable for GaN-based high ele...

The device library in the standard circuit simulator (SPICE) lacks a gallium nitride based high-electron-mobility-transistor (GaN-HEMT) model, required for design and verification of power-electronic circuits. This paper shows that GaN-HEMTs can be modeled by selected equations from MOSFET LEVEL 3 model SPICE. A method is proposed extraction SPICE parameters these equations. parameter-extractio...

We study ultrafast operation of multiple-valued quantizers composed of resonant-tunneling diodes (RTDs) and high electron mobility transistors (HEMTs). The operation principle of these quantizers is based on the monostable-multistable transition logic (MML) of series-connected RTDs. The quantizers are fabricated by monolithically integrating InP-based RTDs and 0.7-μm-gate-length HEMTs with a cu...

In this paper AlGaN/GaN heterostructure device analysis carried out which are capable for high power and frequency with performances far superior to those offered by the mainstream silicon technology and other advanced semiconductor technologies. AlGaN/GaN HEMT primarily driven by microwave wireless communication applications need. The last few years have witnessed major effort in the developme...

In this paper, we report the latest progress of a GaN-based broad-band power amplifier using AlGaN/GaN high electron mobility transistors (HEMTs), grown on sapphire substrates, as the active devices. The devices were flip-chip integrated onto the aluminum nitride circuit board for thermal management and electric connection. The circuit topology used novel -matching networks in a four-way binary...

GALLIUM NITRIDE based heterojunction field-effect transistors (HFETs) show great promise for high-frequency, high-power, and high-temperature applications. Many researchers have fabricated AlGaN/GaN HFETs with very impressive results, including a device with a current handling capability of 1.25 A/mm on SiC substrates[2]. Assuming a sheet charge density of 1.4×1013 cm−2, and a saturation veloci...

A comparative assessment of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on silicon and sapphire substrates has been carried out. Large-area power GaN HEMTs with identical device dimensions were fabricated on both substrates. A thicker AlN buffer layer was used for the GaN HEMT on silicon to achieve similar quality and uniformity of GaN epitaxy for ration...