Nitride-based device structures for electronic and optoelectronic applications usually incorporate layers of AlxGa1-xN, and nand p-type doping of these alloys is typically required. Experimental results indicate that doping efficiencies in AlxGa1-xN are lower than in GaN. We address the cause of these doping difficulties, based on results from first-principles densityfunctional-pseudopotential ...

The electrical conductivity of aluminium doped zinc oxide (AZO, ZnO:Al) materials depends on doping induced defects and grain structure. This study aims at relating macroscopic electrical conductivity of AZO nanoparticles with their atomic structure, which is non-trivial because the derived materials are heavily disordered and heterogeneous in nature. For this purpose we synthesized AZO nanopar...

Diamond-like carbon (DLC) thin films used in this study were prepared with DC magnetron sputtering deposition. Silicon (100) wafers were used as the substrates onto which an RF bias was applied during the film deposition. For the nitrogen doped DLC films, a pure graphite target was used as the carbon source and nitrogen gas was introduced into the deposition chamber via a mass flow controller. ...

Abstract: Electrical sensitivity of a boron nitride nanotube (BNNT) was examined toward ethyl acetylene (C4H6) molecule by using density functional theory (DFT) calculations at the B3LYP/6-31G (d) level, and it was found that the adsorption energy (Ead) of ethyl acetylene the pristine nanotubes is about -1.60kcal/mol. But when nanotube has been doped with Si an...