نتایج جستجو برای: 3 300 mm

تعداد نتایج: 1995155  

Journal: :Computers in Industry 2001
Jonghun Park Spyros A. Reveliotis Douglas A. Bodner Chen Zhou Jennfong Wu Leon F. McGinnis

Traditionally, the semiconductor manufacturing industry has been driven by continuous technological advancement of the underlying production processes. Yet, as the industry matures, mere technology development is no longer sufficient. The effective deployment and exploitation of the system production capacity and operational capability become critical for competitive success. Hence, currently, ...

Journal: :ACS nano 2010
Hisato Yamaguchi Goki Eda Cecilia Mattevi Hokwon Kim Manish Chhowalla

The deposition of atomically thin highly uniform chemically derived graphene (CDG) films on 300 mm SiO(2)/Si wafers is reported. We demonstrate that the very thin films can be lifted off to form uniform membranes that can be free-standing or transferred onto any substrate. Detailed maps of thickness using Raman spectroscopy and atomic force microscopy height profiles reveal that the film thickn...

2010
Margarete Zoberbier Stefan Lutter Marc Hennemeyer Barbara Neubert Ralph Zoberbier

Technology advances such as 3-D Integration are expanding the potential applications of products into mass markets such as consumer electronics. These new technologies are also pushing the envelope of what’s currently possible for many production processes, including lithography processes and wafer bonding. There is still the need to coat, pattern and etch structures. This paper will explore so...

2001
Mao-Jiun J. Wang Hsiu-Chen Chung Hsin-Chieh Wu

Semiconductor manufacturing industry is moving into the production of 300-mm wafers. To solve the increased workload problem in manual wafer handling, some personal guided vehicles (PGVs) have been developed to help in the transfer of front opening unified pods (FOUP). This study compares two kinds of PGVs with a traditional cart and evaluates the feasibility of using them for manual FOUP handl...

Journal: :Thin Solid Films 2021

Metal organic chemical vapor deposition of AlGaAs on GaAs nominal 300 mm (001) Si was studied using selective epitaxial growth. Growth and structural characterization layers formed structures is presented. with different compositions were fabricated top faceted structures. Energy Dispersive X-ray spectra investigated to characterize the structure. It found that growth for red optical emission n...

Journal: :IJMTM 2008
Jian Wu Xuekun Sun Z. J. Pei X. Jack Xin Kelli Simmelink

Silicon wafers are the primary semiconductor substrates used to fabricate Integrated Circuits (ICs). Recently, the industry is making a transition from 200 to 300 mm wafers. To attain very flat 300 mm silicon wafers, grinding has been used to flatten the wire-sawn wafers. However, it is challenging for grinding to remove the waviness induced in wire sawing. To enhance the waviness removal abili...

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