Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS I...

This work presents a micromachined RF-CMOS transformer fabricated in a commercially available 0.18μm CMOS process. Maskless micromachining post-processing is used to remove oxide and substrate material from around the transformer, reducing parasitic effects and improving the performance of the transformer. Index Terms — baluns, CMOS integrated circuits; MEMS, maskless micromachining, Q enhancem...

This paper reviews CMOS (complementary metal-oxide-semiconductor) MEMS (micro-electro-mechanical systems) fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator) CMOS MEMS are introduced separately. Introduction of associated...

Spintronic oscillators are nanodevices that are serious candidates for CMOS integration due to their compactness and easy frequency tunability. For a crystal oscillator to work, there must exist a feedback path with properly What practical circuits do is design such that we have a phase-shift of 180. A double balanced down conversion oscillator mixer using 90 nm CMOS technology is proposed in a...

Current comparator is a fundamental component of current-mode analog integrated circuits. A novel high-performance continuous-time CMOS current comparator is proposed in this paper, which comprises one CMOS complementary amplifier, two resistive-load amplifiers and two CMOS inverters. A MOS resistor is used as the CMOS complementary amplifier’s negative feedback. Because the voltage swings of t...