نتایج جستجو برای: گشتل ge

تعداد نتایج: 19972  

2009
Amirmehdi Saedi Harold J. W. Zandvliet

The adsorption of hydrogen on Ge 001 has been studied with scanning tunneling microscopy at 77 K. For low doses 100 L a variety of adsorption structures has been found. We have found two different atomic configurations for the Ge-Ge-H hemihydride and a third configuration that is most likely induced by the dissociative adsorption of molecular hydrogen. The Ge-Ge-H hemihydride is either buckled ...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه علامه طباطبایی - دانشکده ادبیات و زبانهای خارجی 1388

the present study was an attempt to conduct a contrastive analysis between general english (ge) and english for specific purposes (esp) texts in terms of cohesion and cohesive devices. to this end, thirty texts from different esp and ge textbooks were randomly selected. then they were analyzed manually to find the frequency of cohesive devices. cohesive devices include reference, substitution, ...

Journal: :Journal of virology 1999
R S Tirabassi L W Enquist

The role of alphaherpesvirus membrane protein internalization during the course of viral infection remains a matter of speculation. To determine the role of internalization of the pseudorabies virus (PRV) gE and gI proteins, we constructed viral mutants encoding specific mutations in the cytoplasmic tail of the gE gene that inhibited internalization of the gE-gI complex. We used these mutants t...

2013
Mastura Shafinaz Zainal Abidin Ryo Matsumura Mohammad Anisuzzaman Jong-Hyeok Park Shunpei Muta Mohamad Rusop Mahmood Taizoh Sadoh Abdul Manaf Hashim

We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl₄:C₃H₈O₂) electrolyte with constant current of 50 mA for 30 min. The measured Raman spectra and electron backscattering diffraction (EBSD) images show that the as-deposited Ge thin fi...

ژورنال: :مجله علوم و تکنولوژی پلیمر 2013
مصطفی سبزیکار بروجردی سهیل داریوشی مجتبی صدیقی

کاربرد سازه­های ساندویچی در سازه­هایی که وزن در آنها اهمیت زیادی دارد، مثل هواپیما­ها، قایق­ها و قطارهای تندرو در حال افزایش است. انتخاب مناسب جنس هسته و رویه­ها از نکات مهم در طراحی سازه­های ساندویچی است. امروزه استفاده از رویه های فلزی یا کامپوزیتی رایج است. اما، هریک از این مواد معایبی دارند که کاربرد آنها را محدود می سازد. از این رو، چندلایه­های فلز- الیاف با داشتن خواص مکانیکی مناسب که تلف...

Journal: :IEEE Transactions on Nuclear Science 1992

Journal: :Journal of virology 2005
Katarina Polcicova Kim Goldsmith Barb L Rainish Todd W Wisner David C Johnson

Herpes simplex virus (HSV) spreads rapidly and efficiently within epithelial and neuronal tissues. The HSV glycoprotein heterodimer gE/gI plays a critical role in promoting cell-to-cell spread but does not obviously function during entry of extracellular virus into cells. Thus, gE/gI is an important molecular handle on the poorly understood process of cell-to-cell spread. There was previous evi...

Journal: :ACS nano 2011
Chun-I Tsai Chiu-Yen Wang Jianshi Tang Min-Hsiu Hung Kang L Wang Lih-Juann Chen

The effects of partial substitution of Ge for Si in cobalt germanosilicide (CoSi(1-x)Ge(x) and Co(2)Si(1-x)Ge(x)) nanowires (NWs) on the electrical transport, magnetic properties, and magnetoresistance (MR) have been investigated. Cobalt germanosilicide NWs were synthesized by a spontaneous chemical vapor transport growth method. The Ge concentration can be selectively controlled from 0 to 15% ...

2014
I. Pethes I. Kaban R.-P. Wang B. Luther-Davies P. Jóvári

The structure of GexAs10Se90-x (x=10, 17.5, 22.5, 27.5, 30, 35) glasses as well as some other compositions extensively used in infrared optics, e.g. GASIR® (Ge22As20Se58) and AMTIR-1 (Ge33As12Se55) has been investigated by X-ray diffraction (XRD) and extended X-ray absorption fine structure (EXAFS) measurements at the Ge, As and Se K-edges. Structural models have been obtained by fitting simult...

2017
L. Khomenkova D. Lehninger O. Kondratenko S. Ponomaryov O. Gudymenko Z. Tsybrii V. Yukhymchuk V. Kladko J. von Borany J. Heitmann

Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge content...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید