Multiwalled carbon nanotube (MWCNT) arrays have been directly synthesized from templated Fe2O3 nanoparticles on the C-face of 4H-SiC substrates by microwave plasma chemical vapor deposition (MPCVD), and the room-temperature thermal resistances of SiC-MWCNT-Ag interfaces at 69–345 kPa as well as the thermal resistances of SiCMWCNT-Ag interfaces up to 250 C (at 69 kPa) have been measured using a ...

SiC single crystal is usually grown by sublimation (modified Lely method). There is a lotof remaining issues that should be solved. One is the technical problems of SiC single crystal growth process. And the other is the theoretical problem based on SiC physical properties. As the example of technical issues, in this paper, the example of design optimization for SiC sublimation growth is descri...

This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bon...

Recently, energy saving is strongly required to prevent global warming. Electricity is the most common energy form and is necessary in our daily life and various activities, because it is comparatively easy to utilize in transmission and conversion after generation. Therefore, it is very important to reduce energy loss in electric power systems and improve their efficiency. The present power sy...

C. A. Fuchs and M. Sasaki defined the quantumness of a set of quantum states in [1], which is related to the fidelity loss in transmission of the quantum states through a classical channel. In [4], Fuchs showed that in d-dimensional Hilbert space, minimum quantumness is 2 d+1 , and this can be achieved by all rays in the space. He left an open problem, asking whether fewer than d states can ach...

Aims. The SiC optical constants are fundamental inputs for radiative transfer (RT) models of astrophysical dust environments. However, previously published values contain errors and do not adequately represent the bulk physical properties of the cubic (β) SiC polytype usually found around carbon stars. We provide new, uncompromised optical constants for βand α-SiC derived from single-crystal re...

Performance of optical code division multiple access (O-CDMA) system is influenced by multiple access interference (MAI) resulted from the overlapping between the users. To overcome this problem, successive interference cancellation (SIC) scheme is applied to O-CDMA systems. In this paper we apply successive interference cancellation technique to a spectral amplitude coding (SAC) system that us...

Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal gro...

Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of this material. In addition, poly-crystalline 3CSiC was also grown on (100)Si so that a comparison with monocrystaline 3C-SiC, also grown on (100)Si, could be made. The mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si sub...