Silicon carbide (SiC) is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions) of SiC is still lacking. In this work, we used the Monte-Carlo and molecular...

The diffusion of water in amorphous SiC a-SiC was investigated by molecular modeling methods based on density functional theory. It was assumed that the structure of a-SiC at the molecular level can be described by a model that takes into account a distribution of cage structures which consist of SiC units forming n-member rings from a suitable precursor in a chemical vapor deposition process. ...

In this paper successive interference cancellation (SIC) based on optical code division multiple access (O-CDMA) systems has been investigated. SIC scheme refers to a family of low complexity multi-user detection (MUD) methods for direct sequence CDMA systems. Performance of optical CDMA system is influenced by multiple access interference (MAI) resulted from the overlapping between the users. ...

SIC (Successive Interference Cancellation) is an effective way of multiple packet reception (MPR) to fight with interference in wireless networks. Most of the existing methods for SIC in wireless networks are mainly focusing on link scheduling. For characterizing the impact of SIC, two interference models such as layered protocol model and layered physical model are introduced. Various existing...

Colloidal cubic silicon carbide (SiC) nanocrystals with an average diameter of 4.4 nm have been fabricated by anisotropic wet chemical etching of microsized cubic SiC powder. Fourier transform infrared spectra show that these cubic SiC nanocrystals contain carboxylic acid, SiH, CH, and CHx groups. UV/Vis absorption and photoluminescence (PL) spectroscopy clearly indicate that water and ethanol ...

Semi-insulating silicon carbide (SiC) is a fully processable semiconductors substrate that is commonly used as an alternative to conventional silicon (Si) in high-power applications. Here we examine the feasibility of using SiC as a substrate for the development of minimally invasive multi-sensor micro-probes in the context of organ monitoring during transplantation. In particular, we make a th...

SiC porous granules were synthesized from activated granular charcoal and Si powder at 973K by using a Na flux. The SiC granules maintained the shape of the charcoal with a dimension of about 5mm in diameter and 7–10mm in length. X-ray diffraction showed the structure of the formed SiC to be cubic -type. Agglomerates of a few dozen nm of SiC grains and an electron diffraction ring pattern of -S...

ZnO/SiC heterojunctions show great potential for various optoelectronic applications (e.g., ultraviolet light emitting diodes, photodetectors, and solar cells). However, the lack of a detailed understanding of the ZnO/SiC interface prevents an efficient and rapid optimization of these devices. Here, intrinsic (but inherently n-type) ZnO were deposited via molecular beam epitaxy on n-type 6H-SiC...

Silicon carbide composites (SiC/SiC) are promising candidate materials for fusion reactors. For the practical application of this class of materials, a design basis for SiC/SiC composites needs to be developed because of inherent brittle-like fracture, i.e., quasi-ductility, which is totally different from ductility of metals. For this purpose, the failure behavior, i.e., matrix cracking behavi...

Silicon carbide (SiC) an industrial-scale product manufactured through the Acheson process, is largely employed in various applications. Its toxicity has been poorly investigated. Our study aims at characterizing the physico-chemical features and the in vitro impact on biological activity of five manufactured SiC powders: two coarse powders (SiC C1/C2), two fine powders (SiC F1/F2) and a powder...