Quasi-type II heterostructured nanocrystals (NCs) have been of particular interest due to their great potential for controlling the interplay charge carriers. However, lack material choices quasi-type NCs restricts accessible emission wavelength from red near-infrared (NIR), which hinders use in light-emitting applications that demand a wide range visible colors. Herein, we demonstrate new clas...

Two new inorganic-organic hybrid II-VI semiconductor nanostructures have been synthesized by solvothermal reactions. These nanostructures consist of inorganic ∞[ZnSe] layers and organic bridging diamine molecules as spacers. The crystal structures of [ZnSe(dbn)1/2](1, dbn = 1,4-diaminobutane) and [ZnSe(hda)1/2](2, hda = 1,6-hexanediamine) have been determined by the powder X-ray diffraction met...

High quality ZnSe nanowires (NWs) and complementary ZnSe/CdSe core/shell species have been synthesized using a recently developed solution-liquid-solid (SLS) growth technique. In particular, bismuth salts as opposed to pre-synthesized Bi or Au/Bi nanoparticles have been used to grow NWs at low temperatures in solution. Resulting wires are characterized using transmission electron microscopy and...

Delta doping techniques have been investigated to enhance the p-type doping of ZnSe. Tellurium was used as a codopant for improving the nitrogen doping efficiency. The net acceptor concentration (NA2ND) increased to 1.5310 18 cm using single d doping of N and Te ~N1Te!, while it was limited to 8310 cm by d doping of N alone. A promising approach was developed in which three consecutive d-doped ...

METHODS: The quantitative methodology was based on ELISA in poly(dimethylsiloxane)-gold nanoparticle composite microreactors. CdTe and ZnSe quantum dots were bioconjugated with antibodies for sandwich immunoassay. After the CdTe and ZnSe quantum dots were dissolved, Cd and Zn were detected by square-wave anodic stripping voltammetry to enable the quantification of the two biomarkers. The two bi...

The paper presents the results on development of an optical coating for a single-crystal ZnGeP2 substrate based selenide-oxide pair materials (ZnSe/Al2O3). obtained ensures operation OPO in mid-IR range up to 5 μm wavelengths. possibility ZnSe sputtering by IBS method is shown. has high laser-induced damage threshold (LIDT) value at 2097 µm wavelength: WoE=3.51 J/cm2 energy density and WoP= 101...

The technology of hot-pressed Cr(2+):ZnSe ceramic preparation is reported. Comparative gain-switched lasing of hot-pressed ceramic and CVD grown Cr(2+):ZnSe samples with slope efficiencies up to 10% and output energies up to 2 mJ were demonstrated. This is a milestone in the development of future large scale mid-IR laser systems based on ceramic TM(2+):II-VI materials. This evolving technology ...

The effect of Zn:Se ratio on the photoconducting properties of ZnSe thin films has been studied. The ZnSe thin films have been deposited onto glass substrates by the spray pyrolysis method, the substrate temperature kept at 430◦C using mixed aqueous solutions of ZnCl2 and SeO2 with different Zn:Se ratios. Their electrical, structural, and photoconductivity properties have been studied. The valu...