Substrate engineering [1] has enabled the industry to overcome many of the limitations encountered by traditional scaling. As a result, device architecture and engineered substrates have become strongly coupled, a coupling that is growing stronger as the IC industry moves to the 32 nm technology node and beyond. Substrate engineering started in earnest with the industry transition to SOI wafers...

[1] Time series for the Southern Oscillation Index (SOI) and global tropospheric temperature anomalies (GTTA) are compared for the 1958 2008 period. GTTA are represented by data from satellite microwave sensing units (MSU) for the period 1980–2008 and from radiosondes (RATPAC) for 1958–2008. After the removal from the data set of short periods of temperature perturbation that relate to near-equ...

We have investigated the electrical activation of implanted boron in silicon-on-insulator (SOI) material using Hall effect, four-point probe, and secondary ion mass spectrometry. Boron was implanted at energies ranging from 1 keV to 6.5 keV with a dose of 331014 cm−2 into bonded SOI wafers with surface silicon thickness ranging from 300 Å to 1600 Å. In one sample set, furnace anneals at 750 °C ...

The self-consistent density response of an electron system is studied in a two-dimensional 2D lateral superlattice SL with spin-orbit interaction SOI . Under the effect of the lateral periodic potential, the single-electron 2D states are broadened into minibands that are spin split by SOI. In the case of a single fully occupied miniband, we calculate the long-wavelength limit of the polarizatio...

Abstract In this work, we investigate and analyze the impact of gate tunneling on dynamic behaviors of partially depleted SOI CMOS with the aid of the physically accurate BSIMPD model. We examine in particular the impact of gate tunneling on the history dependence of inverter delays. The examination reveals key requirements for capturing the history effect in SPICE modeling. This study suggests...

In this article, a novel concept is introduced to improve the Radio Frequency (RF) linearity of Partially-Depleted (PD) Silicon-On-Insulator (SOI) MOSFET circuits. The transition due to the non-zero body resistance (RBody) in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free cir...

BACKGROUND Pertussis is poorly controlled, with the highest rates of morbidity and mortality among infants. Although the source of infant pertussis is often unknown, when identified, mothers have historically been the most common reservoir of transmission. Despite high vaccination coverage, disease incidence has been increasing. We examined whether infant source of infection (SOI) has changed i...

The coupling between the spin and orbital degrees of freedom of photons is usually very weak, but recent studies have shown that this spin-orbit interaction (SOI) can be easily detected in metal structures. Here we show how the SOI of light is enhanced in plasmonic metal nanostructures, explore the underlying mechanism for this effect, and further demonstrate how it could potentially be harness...