The signals used in UMTS have wide bandwidth and high crest factors. Circuit designers use sinusoids to design and simulate their building blocks. Formulas are presented relating the various distortion effects of the W-CDMA signals like adjacent channel leakage ratio (ACLR), cross modulation or intermodulation to well-known linearity measures like input intercept point of third(IIP3) and second...

As scaling reduces the breakdown voltage of CMOS devices and as system integration trends demand the further elimination of offchip components, there arises a great need to improve the linearity of RF receivers. Of particular interest is the direct-conversion architecture, which is currently the workhorse of the mobile telecommunications industry. Although much work has been recently reported i...

The MAX2530 receiver RF front-end IC, using Maxim's advanced SiGe process, was originally designed for cellular-band and PCS band operation. For 450MHz CDMA, the NF (noise figure) and the IIP3 (input third-order intercept) of the low noise amplifier (LNA) are very critical in considering the sensitivity, and the single-tone desensitization effect. This technical note gives the tuning method and...

Interest in SOI technology has been increased due to recent progress in modeling parasitic effects needed for analog IC design. In this paper a brief overview of the SOI technology is done. A user compiled model built for ADS is then described before the analysis of 2 RF designs: a wideband Low Noise Amplifier (300MHz-900MHz with more than 10dB gain and 5dBm IIP3) and an antenna switch (with 0....

* Department of Electrical Engineering, Technion, Haifa, Israel ([email protected]) We present our design methodology of a low-noise amplifier (LNA) in 0.18 μm CMOS technology. A 24-GHz LNA having peak gain of 13.8 dB and record low minimum noise figure of 2.8 dB at 25.1 GHz was demonstrated. High quality factor slow wave transmission lines replaced all inductors in the circuit. The LNA ...

This paper presents a general analysis of the 3rd-order nonlinearity of a differential common-emitter (CE) radio frequency (RF) amplifier and a novel way to cancel the 3rd-order nonlinearity. A SiGe BiCMOS mixer is designed based on the 3rd-order cancellation scheme. The mixer achieves +6dBm IIP3, 15dB gain and 7.7dB NF with only 2.2mA current at 2.1GHz. This performance substantially exceeds t...

Two variable gain amplifiers (VGAs) that adopt new approximated exponential equations are proposed in this paper. The dB-linear range of the proposed VGAs is extended more than what the approximated exponential equations predict by a bias circuit technique that adopts negative feedback. The proposed VGAs feature wide gain variation, low-power, high linearity, wide control signal range, and smal...