A compact 10 kW RF power amplifier at 352 MHz was developed at FREIA for the European Spallation Source, ESS. The specifications of ESS for the conception of amplifiers are related to its pulsed operation: 3.5 ms pulse length and a duty cycle of 5%. The realized amplifier is composed of eight kilowatt level modules, combined using a planar Gysel 8-way combiner. The combiner has a low insertion ...

High Efficiency Power Amplifier for Envelope Detection is presented here in this paper which uses the LDMOS power amplifier to achieve high efficiency. The main objective in this work to design a power amplifier which is more efficient when subject to various kind of situations. QAM modulation with 64 point, and Additive White Gaussian Noise Channel was used here in this work. Amplitude Modulat...

Until recently, WiMAX systems have used technology processes such as Gallium-Arsenide (GaAs) to obtain the performance needed from the RF circuits. Although these technologies provide the functional performance required by radios today, they do not support the cost/scalability business model. This paper outline the design of a power amplifier (PA) for WiMAX base station applications at 3.5GHz b...

In this paper, a new robust ESD protection structure has been proposed for smart power technology. By inserting a P+ diffusion into the drain region of 40VLDMOS power transistor, the embedded SCR (ESCRLDMOS) device can be built and without changing any DC I-V characteristics of a 40V-LDMOS power transistor. It is also found that the method with P+ strap inserted into drain region (N+ in NW) can...

In this paper a split-gate LDMOS transistor is investigated. A dedicated terminal, namely split-gate, introduced in order to control the field plate region separately with respect channel region. The performances of device, terms on-resistance, breakdown voltage and capacitances, are compared those conventional device. hot-carrier-induced degradation device also investigated, highlighting influ...