Precursor-reduction method is employed to synthesize nanostructures of ZnTe. The shape of zinc blende ZnTe nanocrystals could be influenced by reaction temperature, concentration of the precursors as well as the use of stabilizing agent. By controlling the synthetic conditions, three types of nanoscaled ZnTe, quasi-spherical ZnTe nanocrystals, ZnTe nanobelts and ZnTe nanorods have been observed...

We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as functions of the carrier and lattice temperatures, and in the case of semiconductor alloys, of the material composition. # 1999 Elsevier Science Ltd. A...

We study the zitterbewegung of electronic wave packets in III-V zinc-blende semiconductor quantum wells due to spin-orbit coupling. Our results suggest a direct experimental proof of this fundamental effect, confirming a long-standing theoretical prediction. For electron motion in a harmonic quantum wire, we numerically and analytically find a resonance condition maximizing the zitterbewegung.

We show theoretically that stimulated spin-flip Raman scattering can be used to inject spin currents in doped semiconductors with spin-split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be injected in zinc blende crystals and structures. The calculated spin current should be detectable by pump-probe optical spectroscopy and anomalous Hall effect m...

We report the study of optically induced terahertz (THz) electromagnetic radiation from (110) oriented zinc-blende crystals. This work extends our previous studies of (100) and (111) GaAs. Excellent agreement between calculated results and experimental data indicates that, under conditions of moderate optical fluence and normal incidence on the unbiased sample, second-order optical rectificatio...

A theory of optical anisotropy for zinc-blende semiconductors in an electric field is derived by extending the formalism of Luttinger and Kohn [Phys. Rev. 97, 869 (1955)] to higher order. This resolves a recent controversy over the correct form of the Hamiltonian for the degenerate valence bands.

We study the growth and properties of quaternary-alloy ferromagnetic semiconductor (In0.94−x,Gax,Fe0.06)Sb (x = 5%–30%; Fe concentration is fixed at 6%) grown by low-temperature molecular beam epitaxy. Reflection high-energy electron diffraction patterns, scanning transmission microscopy lattice images, x-ray spectra indicate that layers have a zinc blende crystal structure without any other se...