نتایج جستجو برای: wave semiconductor laser amplifier
تعداد نتایج: 460662 فیلتر نتایج به سال:
We describe a continuous-wave master-oscillator power-amplifier system based on a distributed Bragg reflection diode laser and an Yb doped fiber amplifier. The observed optical spectrum of the amplified seed source can be tailored to arbitrary shapes and widths between 30 MHz and greater than 1 GHz by controlling the radio frequency modulation wave form of the injection current. © 2006 American...
A theoretical study of active mode-locking fiber loop laser using semiconductor optical amplifier (SOA) was presented in this paper. The effects of linewidth broadening factor of SOA on active mode-locking were investigated originally. The relations between parameters of output pulse series and the critical parameters of SOA and other elements in fiber loop were obtained. 2002 Elsevier Science ...
We demonstrate 10Gbit/s operation of two different types of monolithic photocurrent driven wavelength converters (PD-WC). These photonic integrated circuits use a Semiconductor Optical Amplifier (SOA)-PIN photodetector receiver to drive an Electro-absorption (EA), or Mach-Zehnder (MZ) modulator that is integrated with a SGDBR tunable laser. We demonstrate improvements in optical bandwidth, inse...
We present our research on the high energy picosecond laser operating at a repetition rate of 1 kHz and the high average power picosecond laser running at 100 kHz based on bulk Nd-doped crystals. With diode-pumped solid state (DPSS) hybrid amplifiers consisting of a picosecond oscillator, a regenerative amplifier, end-pumped single-pass amplifiers, and a side-pumped amplifier, an output energy ...
The nonlinearity difference in the two passbands of a distributed-feedback semiconductor laser amplifier was studied experimentally. A theoretical explanation was given by using the transmission matrix approach. The difference of nonlinearity in the two passbands was found to be enhanced greatly by the mechanism of asymmetric facet reflection.
Beating noise in narrow-linewidth erbium-doped fiber ring lasers puts severe limitations on applications of the lasers. We demonstrate the suppression of beating noise in fiber ring lasers by using a semiconductor optical amplifier in the laser cavity, which acts as a high-pass filter. Two different ring structures are presented as examples to demonstrate this beating noise suppression.
The first integrated SGDBR laser/Semiconductor Optical Amplifier-MachZehnder modulator transmitter is presented. Devices have 3dB bandwidth ranging from 1318GHz corresponding to electrodes lengths that range between 200-300um long. This corresponds to a Vpi of 4.8-6.2V Fig. 1 MZ-SOA-SGDBR layout
A simple analysis is presented of twin-stripe semiconductor Y-junction laser amplifier switches that operate through simultaneous changes in gain and refractive index due to free carrier injection. This shows that (in contrast to four-port directional coupler devices based on the same mechnism) good cross-talk performance may be obtained for a wide range of operating conditions.
Abstract In this paper, a Reflective Semiconductor Optical Amplifier based, Radio-over-Fibre access network configuration has been proposed to feed future millimeter-wave radio systems. The system architecture combines several approaches overcome the challenges of signal transmission. semiconductor optical amplifier modulator realizes colorless and relatively cost-effective Remote Antenna Unit....
The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi-continuous-wave regime at 80 MHz as well as under long-pulse pho...
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