Thick, self-separated GaN layers have been grown by hydride vapor phase epitaxy (HVPE) on templates with SiN-interlayers, which worked as the separation layer. The used templates were prepared by metalorganic vapor phase epitaxy (MOVPE) to start with an excellent seed layer. As several groups reported, it was observed, that by using only one SiN-interlayer, the dislocation density could be redu...