BACKGROUND The purpose of this study was to investigate postoperative intraocular pressure (IOP) in cases of silicone oil (SO) removal when using 25-gauge transconjunctival sutureless vitrectomy (TSV) with oblique incisions. METHODS We enrolled ten consecutive eyes with SO removal (SO group) and eleven consecutive eyes with idiopathic epiretinal membrane (ERM) as the initial vitrectomy (ERM g...

Two proficient tracheoesophageal speakers experienced in use of the tracheostoma valve (TSV) produced a total of 64 examples of "Bev loves Bob." These productions varied with location of contrastive stress, type of sentence intonation, and use of TSV. Thirty-four listeners judged the utterances in terms of stress placement and intonation contour simultaneously. An analysis of variance of the pe...

Abstract This study examines the impact of bonding sequence on contact resistance in hybrid a via-middle Cu though-silicon via (TSV) wafer. Hybrid was performed at room temperature surface-activated method using an ultrathin Si film. Comparative various sequences revealed that (a) cleaning target Si, TSV, and electrode wafers with Ar fast atom beam (FAB), (b) transferring wafer into another cha...

The application of Cu-filled through-silicon via (TSV) in 3-D integrated circuit packaging faces several fabrication and reliability issues. In this study, we introduced a Cu-Ni alloy for TSV filling with a high filling speed and a reduced TSV protrusion. In particular, the characteristics of Cu-Ni via protrusions at various annealing temperatures (3200­450°C) were investigated with experimenta...

Recent progress in process technology makes it possible to vertically stack multiple integrated chips. In three dimensional integration circuits (3D ICs), through silicon vias (TSVs) are used to communicate signals between layers. However, TSVs act as obstacles during placement and routing and have a negative impact on chip yield. Therefore, TSV number minimization is an important topic in 3D I...

Electromigration induced failure development in a copper dual-damascene structure with a through silicon via (TSV) located at the cathode end of the line is studied. The resistance change caused by void growth under the TSV and the interconnect lifetime estimation are modeled based on analytical expressions and also investigated with the help of numerical simulations of fully three-dimensional ...

We demonstrate a coupled equipmentand feature-scale process simulation and its application to plasma-enhanced chemical vapor deposition (PECVD) as part of a sequence for the fabrication of a through-silicon via (TSV) interconnect. The TSV structure is characterized electrically and mechanically by means of finite element simulation. This chain allows one to determine the effects of process vari...

Abstract Hair-to-hair interaction is often ignored in human hair modeling, due to its computational and algorithmic complexity. In this paper, we present our experimental approach to simulate the complex behavior of long human hair, taking into account the hair-to-hair interactions. For long hair, we propose the thin shell volume (TSV) model for enhancing hair realism by simulating complex hair...

The purpose of this paper is to efficiently exploit swizzling in reducing coupling noise between the bit lines of a TSV-based data bus in three-dimensional integrated circuits. The core concept of swizzling is to distribute the noise of an aggressor to all victims, rather than concentrating on the nearest victim. Based on this principle, an optimal swizzling pattern, which achieves an equal dis...

Hair-to-hair interaction is often ignored in human hair modeling, due to its computational and algorithmic complexity. In this paper, we present our experimental approach to simulate the complex behavior of long human hair, taking into account hairto-hair interactions. We describe a thin shell volume (TSV) model for enhancing hair realism by simulating complex hair-hair interaction. The TSV is ...