Articles you may be interested in Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment Appl. Correlation of photoconductivity response of amorphous In–Ga–Zn–O films with transistor performance using microwave photoconductivity decay method Appl. Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes...

Copper zinc tin sulfide (CZTS) thin films were deposited from homogeneous solutions of precursors and directly onto conductive films via selective thermolysis by microwave heating. Microwave energy is absorbed strongly by conductive films, which enables preferential heating to a sufficiently high temperature for the deposition of CZTS exclusively on the conductive layer without homogeneous nucl...

Indium tin oxide (ITO) thin films were prepared by the sol–gel dip-coating (SGDC) technique. The microstructure and electrical properties of ITO thin films crystallized using rapid thermal annealing (RTA) were compared with those of films prepared by classic thermal annealing (CTA). ITO thin films were successfully prepared by CTA at 500 jC for 30–60 min. At the same temperature of 500 jC and w...

The inductively coupled plasma etching characteristics of Co2MnSi thin films patterned using a TiN hard mask were investigated by the addition of CH3OH to Ar gas. As the CH3OH concentration increased, the etch rates of Co2MnSi magnetic thin films and TiN hard mask decreased, but the etch profile improved. The effects of rf power, dc-bias voltage and gas pressure on the etch rate and etch profil...

the improvement of the physical properties of indium tin oxide (ito) layers is quite advantageous in photovoltaic applications. in this study the ito film is deposited by rf sputtering onto p-type crystalline silicon (c-si) with (100) orientation, multicrystalline silicon (mc-si), and glass substrates coated with zno and annealed in vacuum furnace at 400°c. electrical, optical, structural and m...

Variable angle reflectance FTIR was used to investigate the reflectance of thin films of either indium tin oxide (ITO) or fluorine-doped tin oxide (SFO) on glass substrates in the mid-IR. The reflectance was observed to depend on the incident angle, wavenumber, and the polarization used. The Drude model and the Fresnel equations for reflection at a single dielectric boundary were used to interp...

Transparent conducting tin oxide thin films have been prepared by electron beam evaporation and spray pyrolysis methods. Structural, optical and electrical properties were studied under different preparation conditions like substrate temperature, solution flow rate and rate of deposition. Resistivity of undoped evaporated films varied from 2⋅65 × 10 Ω-cm to 3⋅57 × 10 Ω-cm in the temperature ran...