Thin films of Al2O3 have been deposited on ITO-coated glass substrates by a sol-gel dipcoat process. Aluminium isopropoxide (Al(OC3H7)3) was used as the Al source material. X-ray diffraction measurements show that these films are amorphous. Scanning electron microscopy and atomic force microscopy images of the films have revealed a relatively flat surface with no cracks. The dielectric properti...

We performed neutron reflectivity measurements on multilayered polymer thin films consisting of alternatively stacked deuterated polystyrene (d-PS) and hydrogenated polystyrene (h-PS) layers ∼200 Å thick as a function of temperature covering the glass-transition temperature T(g), and we found a wide distribution of T(g) as well as a distribution of the thermal expansivity α within the thin film...

This paper presents theoretical and experimental results on the problem of bounded acoustic beam reflection at the Rayleigh angle from a fluid-solid interface which is loaded by a thin solid layer. The theoretical development exploits the framework of existing theory to yield a simple, analytic model which is reasonably accurate for thin layers. It is shown that the influence of the layer is co...

The processor and its packaging are idealized as depicted in Figure 1. ATMI models two layers of different materials. Typically, layer 1 is silicon and layer 2 is metal. Both layers have horizontal dimensions L× L, with L the width of the metal layer (or the square root of its area). That is, ATMI assumes a large silicon chip, which neglects the impact of chip edges. The interface material betw...

1 ATMI model The processor and its packaging are idealized as depicted in Figure 1. ATMI models two layers of different materials. Typically, layer 1 is silicon and layer 2 is metal. Both layers have horizontal dimensions L× L, with L the width of the metal layer (or the square root of its area). That is, ATMI assumes a large silicon chip, which neglects the impact of chip edges. The interface ...

Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO2(B) thin film on a perovskite SrTiO3 (STO) substrate. We observe an ultrathin (2-3 unit cells) interlayer best described as highly strained VO2(B) nanodomains combined with an extra (Ti,V)O2 layer on the TiO2 te...

The Raman intensity of Rhodamine B (RhB) is enhanced by inserting a thin high κ dielectric layer which reduces the surface plasmon damping at the gold-graphene interface. The results indicate that the Raman intensity increases sharply by plasmonic resonance enhancement while maintaining efficient fluorescence quenching with optimized dielectric layer thickness.

The power conversion efficiency of solar cells based on copper (I) oxide (Cu2 O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2 O3 ) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passiv...