This work presents the absorptance of high-temperature superconducting YBa Cu O 2 3 7 d I 1 ( ) YBCO films, deposited on Si substrates, in the far infrared from 15 to 95 cm ( ) ( wav elength from 667 to 105 m m at temperatures of 100, 200, and 300 K i.e., in the ) normal state . Our experiments show a significant difference in the absorptance for radiation incident on the film side as compared ...

This paper studies the structural robustness of evolutionary models of cooperation, i.e. their sensitivity to small structural changes. To do this, we focus on the Prisoner’s Dilemma game and on the set of stochastic strategies that are conditioned on the last action of the player’s opponent. Strategies such as Tit-For-Tat (TFT) and Always-Defect (ALLD) are particular and classical cases within...

Solutions to the twisted Yang-Baxter equation arising from intertwin-ers for cyclic representations of U q (sl n) are described via two coupled the lattice current algebras.

The gate bias and temperature instability of InGaZnO TFTs were improved by adopting double stacked channel layer (DSCL). The mechanism of Vth shift under stress was studied by this structure. An interface with of less oxygen plasma damaging and lower oxygen vacancies in bulk were achieved by DSCL, resulting in a higher stability of Vth.

The presence of a deformation or hump in the subthreshold region of the transfer characteristic of Amorphous Oxide Semiconductor (AOS) Thin-Film Transistors (TFTs) has been observed after DC stress and related to different causes. In previous works, it has been shown that in devices with active-layer thickness greater than 120 nm, a region with relatively high conductivity remains near the back...

We report on the fabrication of coplanar dual-gate ZnO thin-film transistors with 200-nm thickness SiNx for both top and bottom dielectrics. The ZnO film was deposited by RF magnetron sputtering on SiO2/Si substrates at 100◦C. And the thickness of ZnO film is compared with 100-nm and 40-nm. This TFT has a channel width of 100-μm and channel length of 5-μm. The fabricated coplanar dual-gate ZnO ...

Current temperature stress (CTS) measurements were performed on RF sputter amorphous In-Ga-Zn-O (a-InGaZnO) thin film transistors (TFTs). We investigated the effect of stress current (ISTR) and stress temperature (TSTR) on the electrical properties of the aInGaZnO TFTs when stressed in both the linear and saturation regimes.

Novel Processes for Poly-Si Thin-Film Transistors on Plastic Substrates

PRODUCT DESCRIPTION The AD688 is a high precision ±10 V tracking reference. Low tracking error, low initial error and low temperature drift give the AD688 reference absolute ±10 V accuracy performance previously unavailable in monolithic form. The AD688 uses a proprietary ion-implanted buried Zener diode, and laser-waferdrift-trimming of high stability thin-film resistors to provide outstanding...

The correlators of two-dimensional rational conformal field theories that are obtained in the TFT construction of [ I , II , IV ] are shown to be invariant under the action of the relative modular group and to obey bulk and boundary factorisation constraints. We present results both for conformal field theories defined on oriented surfaces and for theories defined on unoriented surfaces. In the...