نتایج جستجو برای: thermal oxidation

تعداد نتایج: 330290  

2016
Patrick J. Pinhero Daniel J. Sordelet James W. Anderegg Pierre Brunet Jean-Marie Dubois Patricia A. Thiel PATRICK J. PINHERO DANIEL J. SORDELET

We have investigated formation of oxides on quasicrystalline and crystalline alloy surfaces of similar composition, in different oxidizing environments. This includes a comparison between a quaternary orthorhombic approximate of Al-Cu-Fe-Cr quasicrystal and the ternary AI-Cu-Fe quasicrystalline and crystalline phases. We noted that each sample showed the following common trends: preferential ox...

2004
J. BRODHEAD

This paper will highlight various methods utilized for cnvironmcntal compliance with solvent coating and laminating applications. Discussion will summarize the recovery and oxidation alternatives, including a brief overview of thc advantages and disadvantages. The paper concludes by focussing on more specific examples of solutions, including capture hooding and enclosures, dryer air flow scheme...

2002
GOTTFRIED HAASE

Both ascorbic acid and copper were strong prooxidants in the oxidation of linoleate in a buffered (pH 7.0) aqueous dispersion at 37OC. Minimum concentrations at which catalytic activity was detected were 1.3 X 10-7 M for coppcr and 1.8 X 10-6 M for ascorbic acid. For concentrations up to lop3 M, the increase in rate of oxidation with increase in concentration of catalyst was greater for ascorbi...

2012
Yanlu Gan Qiongfen Qiu Pengfei Liu Junpeng Rui Yahai Lu

9 Co-first authors who contributed equally to this work. 10 11 *Corresponding author: 12 Yahai Lu 13 College of Resources and Environmental Sciences, 14 China Agricultural University 15 Beijing 100193, China 16 Phone: +86-10-62733617; Fax: +86-10-62733617 17 Email: [email protected] 18 19 Running title: Syntrophic propionate oxidation in rice field soil 20

2001
Pei-Cheng Ku Connie J. Chang-Hasnain

A simple physical model is developed for the thermal oxidation process of AlGaAs using the continuity equation. The model is based on the principle of oxidant mass conservation. Theoretical calculations are compared with experimental data to a good agreement. The model is then applied to the study of VCSEL batch fabrication. Several control parameters are discussed including AlGaAs layer thickn...

2017
Kaushik Hazratwala

This open‐access article is published and distributed under the Creative Commons Attribution ‐ NonCommercial ‐ No Derivatives License (http://creativecommons.org/licenses/by‐nc‐nd/3.0/), which permits the noncommercial use, distribution, and reproduction of the article in any medium, provided the original author and source are credited. You may not alter, transform, or build upon this article w...

Journal: :CoRR 2007
Fei Duan Jiwei Jiao Yucai Wang Ying Zhang Binwei Mi Jinpeng Li Jian Zhu Yuelin Wang

A novel x-axis tuning fork MEMS gyroscope with “8 vertical springs-proofmass” structure for Coriolis effect detection is presented. Compared with the common single-plane springs, the 8 vertical springs, symmetrically located at the top and bottom sides, more stably suspend the large thick proofmass featuring large capacitance variation and low mechanical noise. A bulkmicromachining technology i...

2007
A. Poncet

The aim of this paper is to present viscoelastic models to accurately simulate mechanical stresses which result from volume expansion during thermal oxidation or temperature ramps in silicon technology. Comparisons are made with wafer curvature measurements and it is shown that mechanical stresses can explain the "anomalously" fast initial regime during dry oxidation, without involving any addi...

2005
P. J. SYRETT

1. Thiobacillus strain C oxidized [35S]thiosulphate completely to sulphate. 2. During thiosulphate oxidation [35S]sulphate was formed more rapidly from (S. 35SO3)2than from (35S *SO3)2-. 35S disappeared less rapidly from thiosulphate with (35S SO3)2as substrate than with (S.35SO3)2-. 3. Thiosulphate labelled in both atoms was produced during (35S * SO3)2oxidation, but not during (S. 35SO3)2oxid...

2002
James H. Stathis

The microelectronics industry owes its considerable success largely to the existence of the thermal oxide of silicon. However, recently there is concern that the reliability of ultra-thin dielectrics will limit further scaling to slightly thinner than 2nm. I will review the physics and statistics of dielectric wearout and breakdown in ultra thin SiO2-based gate dielectrics and discuss the impli...

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