نتایج جستجو برای: thermal mocvd
تعداد نتایج: 218121 فیلتر نتایج به سال:
GROWTH AND CHARACTERIZATION OF FERROMAGNETIC SEMICONDUKTOR GaN:Mn THIN FILMS USING PLASMA ASSISTED METALORGANIC CHEMICAL VAPOR DEPOSITION(PA-MOCVD)
GaN/AlN resonant tunneling diodes RTD were grown by metal-organic chemical vapor deposition MOCVD and negative differential resistance with peak-to-valley ratios as high as 2.15 at room temperature was demonstrated. Effect of material quality on RTDs’ performance was investigated by growing RTD structures on AlN, GaN, and lateral epitaxial overgrowth GaN templates. Our results reveal that negat...
thermal barrier coatings (tbcs) are used to provide thermal insulation to the hot section components of gas turbines in order to enhance the operating temperature and turbine efficiency. hot corrosion and thermal shocks are the main destructive factors in tbcs which comes as a result of oxygen and molten salt diffusion into the coating. in this thesis atmospheric plasma spraying was used to dep...
A series of low-melting, thermally stable cadmium metal-organic chemical vapor deposition (MOCVD) precursors have been synthesized, structurally and spectroscopically characterized, and implemented in growth of highly conductive and transparent CdO thin films. One member of the series, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N-diethyl-N',N'-dimethyl-ethylenediamine)cadmium(II), Cd(hfa)...
By employing a single AlGaN layer with low Al composition, high quality and uniformity AlGaN/GaN heterostructures have been successfully grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). The heterostructures exhibit a high electron mobility of 2150 cm(2)/Vs with an electron density of 9.3 × 10(12) cm(-2). The sheet resistance is 313 ± 4 Ω/◻ with ±1.3% variation. The hig...
Topological insulators are a new class of materials that support topologically protected electronic surface states. Potential applications of the surface states in low dissipation electronic devices have motivated efforts to create nanoscale samples with large surface-to-volume ratios and highly controlled stoichiometry. Se vacancies in Bi(2)Se(3) give rise to bulk conduction, which masks the t...
We report the post-growth thermal annealing and subsequent phase transition of Ga2O3 grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). demonstrated at temperatures higher than 900 °C under N2 ambience, either in situ or ex annealing, can induce from nominally metastable κ- to thermodynamically stable β-phase. This was analyzed structural characterizations ...
Metalorganic chemical vapor deposition (MOCVD) has been used to grow high-quality epitaxial films of Ga1 xMnxN of varying thickness and manganese doping levels. No macroscopic second phases were observed via high resolution X-ray diffraction. Atomic force microscopy revealed MOCVD-like step flow growth patterns with a mean surface roughness as low as 3.78 Å in lightly doped samples, and matched...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید